MCH3479-TL-H Allicdata Electronics
Allicdata Part #:

MCH3479-TL-H-ND

Manufacturer Part#:

MCH3479-TL-H

Price: $ 0.10
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 20V 3.5A MCPH3
More Detail: N-Channel 20V 3.5A (Ta) 900mW (Ta) Surface Mount S...
DataSheet: MCH3479-TL-H datasheetMCH3479-TL-H Datasheet/PDF
Quantity: 1000
3000 +: $ 0.09086
Stock 1000Can Ship Immediately
$ 0.1
Specifications
Vgs(th) (Max) @ Id: --
Package / Case: 3-SMD, Flat Leads
Supplier Device Package: SC-70FL/MCPH3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 900mW (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 10V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 4.5V
Series: --
Rds On (Max) @ Id, Vgs: 64 mOhm @ 1.5A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Not For New Designs
Packaging: Tape & Reel (TR) 
Description

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The MCH3479-TL-H is a type of single-channel, advanced analog high voltage power MOSFET (metal-oxide-semiconductor field-effect transistor). It is typically used in switching applications and for controlling current flows. The MCH3479-TL-H device provides efficient performance in a wide range of operating voltages and temperatures. The device features low gate-source-voltage threshold, high current density and high-temperature operation.

In its simplest form, the MCH3479-TL-H consists of a metal gate electrode, a source electrode, and a drain electrode, all of which are connected to the substrate or body of the device. The gate and source are insulated from each other by a thin layer of gate oxide, while the drain can either be insulated or conductive, depending on the specific application. The gate of the MCH3479-TL-H is designed to be driving with a low gate voltage, which induces a low drain-source voltage (Vds) and high current density.

As is common with other MOSFETs, the MCH3479-TL-H is not completely self-biased, so it must be connected in series with a bias network. This network consists of two resistors, one connected between the gate and the source, and the other connected between the gate and the drain. The bias network provides the necessary gate voltage to turn the MOSFET on and maintains the gate voltage at a specified level to keep the device in a conducting state. Additionally, the bias network should be designed to provide protection against overvoltage (also known as "destructive" voltage).

In general, the MCH3479-TL-H is most often utilized as an electronic switch or amplifier in numerous switching circuits. It is often used in consumer, medical, industrial, and automotive applications. The device is especially useful in motor control, load switching, and power distribution systems, as it can operate in a wide range of voltages, without the need for a large number of components. Additionally, its low gate-source voltage threshold allows it to be switched quickly and easily, making it suitable for high-frequency circuits.

Overall, the MCH3479-TL-H is an excellent example of a single-channel, advanced analog high voltage power MOSFET. Its wide range of operating voltages, low gate voltage threshold, high current density, and high-temperature operation make it an ideal choice for a variety of applications, such as motor control, load switching, and power distribution systems. With its robust design and low cost, the MCH3479-TL-H is certainly well-suited for many applications and should be considered for any project.

The specific data is subject to PDF, and the above content is for reference

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