MCH3486-TL-W

Vgs(th) (Max) @ Id:	2.6V @ 1mA
Package / Case:	3-SMD, Flat Leads
Supplier Device Package:	SC-70FL/MCPH3
Mounting Type:	Surface Mount
Operating Temperature:	150°C (TJ)
Power Dissipation (Max):	1W (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	310pF @ 20V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	7nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	137 mOhm @ 1A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4V, 10V
Current - Continuous Drain (Id) @ 25°C:	2A (Ta)
Drain to Source Voltage (Vdss):	60V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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MCH3486-TL-W is a type of single Metal Oxide Semiconductor Field Effect Transistor (MOSFET).MOSFETs offer the advantage of a high input impedance, allowing for very low current control of high current loads. The MCH3486-TL-W is a logic-level N-channel MOSFET. A logic-level MOSFET is designed to be driven by a 3-5 volt logic signal, unlike earlier MOSFET technologies that require a higher voltage input. Not only is the MCH3486-TL-W a low power MOSFET, but it is also able to handle high surge currents, making it well suited for applications such as automotive use, electronic ballasts and lighting. The MCH3486-TL-W has a maximum drain-source voltage of 40 volts and a drain current of 3 amps. It also has a total gate-source leakage of 100nA, allowing for low power consumption. The MCH3486-TL-W has a drain-source on-resistance of 14 milliohms, making it suitable for applications requiring a low on-resistance. The total gate charge is approximately 10nC, allowing it to switch quickly. The MCH3486-TL-W is used in a wide range of applications such as switching power supplies, battery chargers, DC-DC converters, battery powered systems and motor control. It is also used in automotive applications such as spark plug control, power windows and immobilizers. The working principle of a MOSFET is based on the operation of the MOSFET gate. A gate voltage is applied between the gate and the source of the MOSFET to control the flow of current between the drain and the source of the MOSFET. When the gate voltage is high, the MOSFET is in its "on" state and current is allowed to flow from the drain to the source. When the gate voltage is low, the MOSFET is in its "off" state and no current is allowed to flow from the drain to the source. The MCH3486-TL-W has a very low threshold voltage, allowing it to be driven by a 3-5 volt logic signal. This allows complex control circuits to be built using low cost logic components. The low threshold voltage also allows the MCH3486-TL-W to be used in portable electronics, where the power supply is often limited. The MCH3486-TL-W also has a fast switching speed, making it suitable for high frequency applications. The fast switching speed allows it to be used in a wide range of switching circuits, such as pulse width modulators, frequency synthesizers and digital to analog converters. The MCH3486-TL-W is an excellent choice for a wide range of applications due to its low on-resistance, low power consumption and fast switching speed. This MOSFET offers the advantages of high current control with low power consumption, making it ideal for automotive, industrial and consumer applications.

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