MCP14E4-E/P Allicdata Electronics
Allicdata Part #:

MCP14E4-E/P-ND

Manufacturer Part#:

MCP14E4-E/P

Price: $ 1.33
Product Category:

Integrated Circuits (ICs)

Manufacturer: Microchip Technology
Short Description: IC MOSFET DVR 4.0A DUAL 8DIP
More Detail: Low-Side Gate Driver IC Non-Inverting 8-PDIP
DataSheet: MCP14E4-E/P datasheetMCP14E4-E/P Datasheet/PDF
Quantity: 160
1 +: $ 1.20960
25 +: $ 1.00573
100 +: $ 0.91495
Stock 160Can Ship Immediately
$ 1.33
Specifications
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Base Part Number: MCP14E4
Supplier Device Package: 8-PDIP
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Rise / Fall Time (Typ): 15ns, 18ns
Input Type: Non-Inverting
Current - Peak Output (Source, Sink): 4A, 4A
Series: --
Voltage - Supply: 4.5 V ~ 18 V
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Number of Drivers: 2
Channel Type: Independent
Driven Configuration: Low-Side
Part Status: Active
Packaging: Tube 
Description

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PMIC - Gate Drivers are devices that can provide a voltage control circuit with output power in order to drive and control the power devices in a power supply system. It helps to control the current on the power devices of a power supply system and provides a stable performance with the output. The MCP14E4-E/P is a MOSFET/IGBT Gate driver IC from Microchip. It is designed to offer an efficient, robust, and high-frequency performance for a range of applications.

The MCP14E4-E/P is an ideal replacement for conventional gate drivers due to its higher switching frequency, which can handle up to 10MHz for the fastest gate turnoffs. The IC supports up to 100V input voltage and provides short-circuit current limiting, freewheeling diode control, and other gate charge protection features. The combination of current limiting, thermal shut-down, auto-restart, and under-voltage lockout makes this IC a reliable solution for large and small power supplies.

The MCP14E4-E/P includes an integrated gate driver core, providing a high-power MOSFET/IGBT gate drive solution with a minimum combination of components. It can be used to drive high-power power devices such as MOSFETs and IGBTs in a variety of applications, such as motor control, solar power, battery management, and high-voltage switching applications. In addition, its wide operating voltage range allows it to be used in a variety of applications from low-power designs to high-power switching power supplies.

The MCP14E4-E/P provides a configuration of two low-impedance outputs for high power MOSFET/IGBT. It also provides short-circuit protection and a temperature sensor for monitoring the system temperature. The internal power dissipation is minimized by providing a fast turn-off switching speed. The internal current limitation provides a reliable and steady state performance to the system. This enables the power supply system or motor control system to run reliably and with high output efficiency.

The MCP14E4-E/P can be used to control and drive multiple power MOSFETs/IGBTs in parallel. It has an adjustable threshold, which makes it suitable for different voltage inputs. The on-chip gate-drive bias circuit and on-chip over-temperature protection provide a robust and reliable performance with excellent power and thermal performance. The operating temperature range is -40 to +105 °C with a 6V supply voltage, making it suitable for automotive and industrial applications.

The MCP14E4-E/P is a versatile IC for driving multiple power MOSFETs and IGBTs in applications that require fast switching and high-efficiency. It supports fast switching frequencies and short-circuit current limiting, making it an ideal solution for a variety of motor control, solar power, and battery management applications. Due to its wide operating voltage range and excellent power/thermal performance, it is suitable for a wide variety of applications.

The specific data is subject to PDF, and the above content is for reference

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