| Allicdata Part #: | MCP14E6-E/SN-ND |
| Manufacturer Part#: |
MCP14E6-E/SN |
| Price: | $ 1.23 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | Microchip Technology |
| Short Description: | IC MOSFET DRIVER 2A 8SOIC |
| More Detail: | Low-Side Gate Driver IC Inverting 8-SOIC |
| DataSheet: | MCP14E6-E/SN Datasheet/PDF |
| Quantity: | 300 |
| 1 +: | $ 1.11510 |
| 25 +: | $ 0.92786 |
| 100 +: | $ 0.84357 |
| Logic Voltage - VIL, VIH: | 0.8V, 2.4V |
| Base Part Number: | MCP14E6 |
| Supplier Device Package: | 8-SOIC |
| Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -40°C ~ 150°C (TJ) |
| Rise / Fall Time (Typ): | 12ns, 15ns |
| Input Type: | Inverting |
| Current - Peak Output (Source, Sink): | 2A, 2A |
| Series: | -- |
| Voltage - Supply: | 4.5 V ~ 18 V |
| Gate Type: | IGBT, N-Channel, P-Channel MOSFET |
| Number of Drivers: | 2 |
| Channel Type: | Independent |
| Driven Configuration: | Low-Side |
| Part Status: | Active |
| Packaging: | Tube |
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PMIC Gate Drivers refer to devices which control the operating voltage and current of transistors and other power semiconductor devices. MCP14E6-E/SN is a special gate driver for PMIC, combining advanced Bipolar and MOSFET technologies to deliver superior on-state current drive and small signal switching characteristics. It provides the highest level of performance in large signal, high-frequency operation while exhibiting fast switching and a low dropout voltage.
The MCP14E6-E/SN application fields include driving IGBTs, MOSFETs, and other discrete power semiconductor devices in motor control, inverters, and power supplies. It is designed to drive medium power Mosfets and IGBTs with control signals of up to 10MHz and a high switching speed of up to 25MHz. The device has an operating temperature range from -40°C to +125°C and is available in both the MSOP-8 and SOIC-8 packages.
The working principle of MCP14E6-E/SN is based on its high speed power switching design. The device uses an efficient circuit design to drive the load with both low and high voltages. The MOSFET and IGBT outputs are actively controlled with high current capability and fast switching. The control circuitry works by sensing the input signals and controlling on-state current and off-state voltages accordingly. For example, when the control signal switches the output to the on-state, the device will control the on-state gate current to reduce gate capacitance. When the control signal switches the output to the off-state, the device will control the off-state voltage to reduce device switching losses. The device also has protection features that help ensure safe operation while providing protection from overvoltages and current surges.
In summary, MCP14E6-E/SN is a special gate driver for PMIC, combining advanced Bipolar and MOSFET technologies to deliver superior on-state current drive and small signal switching characteristics with a high switching speed of up to 25MHz. It is designed for driving medium power Mosfets and IGBTs and is ideal for applications in motor control, inverters, and power supplies. The device features an efficient circuit design with protection features for safety and reliable operation.
The specific data is subject to PDF, and the above content is for reference
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MCP14E6-E/SN Datasheet/PDF