MD1802FX Allicdata Electronics
Allicdata Part #:

497-8755-5-ND

Manufacturer Part#:

MD1802FX

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: TRANS NPN 700V 10A ISOWATT218FX
More Detail: Bipolar (BJT) Transistor NPN 700V 10A 57W Through...
DataSheet: MD1802FX datasheetMD1802FX Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 10A
Voltage - Collector Emitter Breakdown (Max): 700V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1.25A, 5A
Current - Collector Cutoff (Max): 200µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 5.5 @ 5A, 5V
Power - Max: 57W
Frequency - Transition: --
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: ISOWATT218FX
Supplier Device Package: ISOWATT-218FX
Description

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MD1802FX Application Field and Working Principle

MD1802FX is a single bipolar junction transistor (BJT) type device that is widely used in consumer electronics, automotive, and industrial applications as a switch and driver. There is a variety of sizes and current switching ratings available within the product line. The transistors are offered in three different categories (low power, medium power, and high power) which enable customers to choose the best option that meets their application requirements.

Types and Structure of the MD1802FX

The MD1802FX is offered in three different configurations, including n-type (NPN), p-type (PNP), and high-voltage (HV) versions. All packages contain three leads; two for voltage/current input/output and one for the collector. The package physical size is typically in the 0.6 mm x 1.3 mm. Low power type devices are typically in the 0.45 mm x 0.85 mm package size.

The structure of the device is similar to that of a single BJT with the collector connected to the base, the emitter connected to the drain and the substrate connected to the source. The device is housed in a plastic package and is radiation hardened, making it suitable for space-related applications. The MD1802FX can be used in various circuit designs, such as amplifier, oscillator, switching, driver, etc.

Working Principle

The MD1802FX bipolar junction transistors operate by applying varying voltages (or currents) to the base to control the current flow between the collector and the emitter. The fundamental principle behind its operation is the fact that when the base-emitter voltage is about 0.7V for an NPN transistor or -0.7V for a PNP transistor, the transistor starts to conduct current. This voltage is known as the forward threshold voltage (or the threshold voltage), below which a transistor will not conduct. The amount of current that flows between the collector and the emitter is determined by the input current at the base. The more current is applied at the base, the higher the collector current, resulting in higher switching power.

The MD1802FX has an exceptionally low forward threshold voltage and is capable of efficiently switching currents between its collector and emitter in the low millivolt range. This low threshold voltage is due to the device\'s integrated base resistor which acts as a voltage-controlled resistor. This helps reduce switching losses and increases the device\'s power output.

Applications

The main applications of the MD1802FX are power switching, amplifier and oscillator. The transistors are typically used in power switching applications to control and drive loads, as well as in amplifier circuits for audio/video applications. The high-voltage versions of the device are suitable for switching high-voltage and/or high-current loads, such as motors, solenoids, and lamps.

The MD1802FX can also be used in oscillator circuits. The low forward threshold voltage of the device allows it to act as a very efficient oscillator. The integrated base resistor helps to reduce switching losses, making it very effective in oscillator applications. Furthermore, the device\'s radiation-hardened package makes it suitable for space-based applications.

Advantages

The MD1802FX bipolar junction transistors offer a number of advantages compared to other transistor technologies. They are compact, efficient, and provide low switching losses. Furthermore, the low forward thresholds allows the device to be used in low-voltage applications, making it suitable for many modern electronic applications. The integrated base resistor also helps to reduce switching losses, improving the device\'s power output. Finally, the device\'s radiation-hardened package makes it suitable for use in space-based applications.

The specific data is subject to PDF, and the above content is for reference

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