MD1810K6-G Integrated Circuits (ICs) |
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Allicdata Part #: | MD1810K6-GTR-ND |
Manufacturer Part#: |
MD1810K6-G |
Price: | $ 1.27 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Microchip Technology |
Short Description: | IC MOSFET DRIVER HI SPEED 16QFN |
More Detail: | Half-Bridge Gate Driver IC Non-Inverting 16-QFN (4... |
DataSheet: | MD1810K6-G Datasheet/PDF |
Quantity: | 1000 |
3300 +: | $ 1.16153 |
Logic Voltage - VIL, VIH: | 0.3V, 1.7V |
Base Part Number: | MD1810 |
Supplier Device Package: | 16-QFN (4x4) |
Package / Case: | 16-VQFN Exposed Pad |
Mounting Type: | Surface Mount |
Operating Temperature: | -20°C ~ 125°C (TJ) |
Rise / Fall Time (Typ): | 6ns, 6ns |
Input Type: | Non-Inverting |
Current - Peak Output (Source, Sink): | 2A, 2A |
Series: | -- |
Voltage - Supply: | 5 V ~ 12 V |
Gate Type: | N-Channel, P-Channel MOSFET |
Number of Drivers: | 4 |
Channel Type: | Independent |
Driven Configuration: | Half-Bridge |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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PMIC - Gate Drivers
The MD1810K6-G is a general-purpose gate driver aimed at connecting and controlling high-power field-effect transistors (FETs) or insulated-gate bipolar transistors (IGBTs). The device can drive up to 6 high-current and/or high-voltage FETs or IGBTs for motor control and power switching applications. The driver is designed to operate with a minimum input voltage of 3.3 V and a maximum input voltage of 10 V, giving it versatility and integration options in a wide range of applications.
Device Overview
The MD1810K6-G gate driver consists of six independent voltage level attenuators. When an appropriate supply voltage is applied, these attenuators will produce a digitally adjustable voltage level between 0 V and the supply voltage. This adjustable voltage level is then amplified and supplied to the output stages which drive the FETs/IGBTs.
The device includes integrated protection features such as over-temperature and thermal overload protections as well as a power-on reset circuit. This device also includes a reset generator that will output a “Ready” signal which can be used by the system controller when the appropriate supply voltage has been applied.
Applications
Thanks to its features, the MD1810K6-G is well-suited to applications such as motor control, DC/DC converters, HVAC controllers and many more applications involving high-power FETs and IGBTs. The device provides considerable flexibility and is able to provide a wide range of output voltages and power levels with a wide range of supply voltages. It is also noted for its low power consumption and cost-effectiveness in applications where multiple FETs or IGBTs are needed.
Working Principle
The MD1810K6-G gate driver utilises a motor control architecture, where it manages and controls the on/off state of the FETs or IGBTs in a synchronous approach. This means the output of the gate driver is controlled with the input signals, with the input signal amplifying the output accordingly. This enables the driver to control the on/off state of different FETs/IGBTs independently with a single control signal.
The device relies on pulse-width modulation (PWM) as its core technique to manage the signals. PWM essentially involves modifying the signal\'s timings to control the duty cycle of the signals. The duty cycle is measured as the ratio between the length of the on-time or \'high\' state and the length of the off-time or \'low\' state. It is this technique which is employed to control the output voltage of the device.
When there is a demand to switch two or more FETs/IGBTs at the same time, the MD1810K6-G is able to effectively manage the current and voltage of the devices in parallel and ensure the synchronous operation of the devices.
Conclusion
The MD1810K6-G gate driver is a versatile and cost-effective solution for applications requiring high-power FETs and IGBTs. The device is packed with protective features and is compatible with a wide range of supply voltages, giving it a lot of flexibility in many applications. Furthermore, its motor control architecture, coupled with the use of PWM, allows it to control the on/off state of FETs/IGBTs with ease and accuracy.
The specific data is subject to PDF, and the above content is for reference
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