MD1803DFX

Series:	--
Packaging:	Tube
Part Status:	Obsolete
Transistor Type:	NPN
Current - Collector (Ic) (Max):	10A
Voltage - Collector Emitter Breakdown (Max):	700V
Vce Saturation (Max) @ Ib, Ic:	2V @ 1.25A, 5A
Current - Collector Cutoff (Max):	200µA
DC Current Gain (hFE) (Min) @ Ic, Vce:	5.5 @ 5A, 5V
Power - Max:	57W
Frequency - Transition:	--
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	ISOWATT218FX
Supplier Device Package:	ISOWATT-218FX

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Transistors - Bipolar (BJT) - Single

The MD1803DFX is a thyristor device which is used as a single bipolar transistor for applications in the fields of power electronics. It is a low-voltage, high-current device which is made up of two main components, a thyristor and an N-Channel MOSFET. The device is used in applications such as power conversion, motor control, and high-current switching.The MD1803DFX is a single bipolar transistor with an NPN structure and a built-in free wheel diode. The device has an operating voltage of 5V and can handle a maximum current of 7A. The device is equipped with a built-in MOSFET structure which allows it to operate with very high speed and efficiency. The device has a maximum voltage of 600V, with a maximum off-state voltage drop of 8V at 1A load.The MD1803DFX is used in applications that require high-current switching. It is especially suited for applications where the control circuitry must be isolated from the switching circuit. The device can be used in applications such as motor control, power converters, and high-current switching.The working principle of the MD1803DFX transistor is based on the principle of bipolar junction transistor (BJT). The device has two p-type layers between the two n-type layers. The p-type layers are called the base and the collector, respectively. The two n-type layers are called the emitter and the substrate.With the application of a small base current, the transistor is biased in the active region which allows for electricity to flow from the collector to the emitter. This electric current flow is transferred to the load connected to the circuit. The MOSFET enables the current to be switched on and off considerably faster than a conventional BJT.The device is also equipped with a built-in MOSFET structure which provides very high speed and efficiency. It helps to reduce the losses and improves the efficiency of the switching circuit. Additionally, the built-in MOSFET structure allows operation at a very fast switching frequency, which is particularly important for applications such as motor control and power conversion.The MD1803DFX is a versatile device which can be used in a range of applications. It is easy to set up and can be used in many different circuits. Its high-current capacity and reliability makes it an attractive choice for various power electronic applications.

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