MD1813K6-G Integrated Circuits (ICs)

Logic Voltage - VIL, VIH:	0.3V, 1.7V
Base Part Number:	MD1813
Supplier Device Package:	16-QFN (4x4)
Package / Case:	16-VQFN Exposed Pad
Mounting Type:	Surface Mount
Operating Temperature:	-20°C ~ 125°C (TJ)
Rise / Fall Time (Typ):	6ns, 6ns
Input Type:	Non-Inverting
Current - Peak Output (Source, Sink):	2A, 2A
Series:	--
Voltage - Supply:	4.5 V ~ 13 V
Gate Type:	N-Channel, P-Channel MOSFET
Number of Drivers:	4
Channel Type:	Independent
Driven Configuration:	Half-Bridge
Part Status:	Active
Packaging:	Tape & Reel (TR)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

MD1813K6-G Application Field and Working Principle

PMIC - Gate Drivers have become increasingly important in the past decade as technologists have worked to improve the efficiency and productivity of electronic systems. One prime example of these components is the MD1813K6-G, a Field Effect Transistor (FET) driver designed to provide high current gain and high-speed switching with an output stage built on a single chip. This article will provide a detailed account of its application field and working principle.The MD1813K6-G is a four-channel N-channel FET Gate Driver that integrates two independent driver circuits, one for each channel of the output stage, connected in parallel. This device is capable of driving up to 10A of peak gate current and 150Vdc of supply voltage, making it highly suitable for powering FETs in a variety of different application fields. One of the most common uses of the MD1813K6-G is in low-voltage power supply systems with step-down or step-up configurations. Its high current gain, fast switching capabilities and low on-resistance make it an ideal choice for high-efficiency switching power supplies. The chip also has a low-side low-voltage lockout feature that effectively shuts down the output of the device if the supply voltage drops below a set threshold. This prevents the FET from being damaged by low-voltage conditions.Other application scenarios for the MD1813K6-Ginclude motor control and RF power supply applications. Here, the driver\'s high-speed response allows for improved dynamic control of the voltage and current supplied to the motor, and the low on-resistance of the chip allows for improved efficiency in these systems. Additionally, the device is highly suitable for achieving high-frequency power conversion both in power supplies and other RF systems.The MD1813K6-G\'s working principle is based on the principle of metal-oxide-semiconductor (MOS) field-effect transistor (MOSFET) technology. This technology is based on the concept use of a dielectric – in this case, silicon dioxide – to isolate a region of the transistor that contains the gate terminal. When a voltage is applied to the gate terminal, the transistor allows current to flow through the channel between the drain and the source. This is a key aspect of the MOSFET\'s performance, and it is how the MD1813K6-G is able to achieve its high current gain and fast switching times. In addition, the chip also includes several other components that help to increase its performance. Among these are low-side and high-side clamping diodes, cross-conduction protection and a low-side low-voltage lockout. These components work together to ensure that the output of the device is always properly regulated, and that the FETs connected to the device are not subjected to excessive voltage or current.In conclusion, the MD1813K6-G is a highly efficient, high-power FET driver that is suitable for a wide variety of applications as outlined above, with its working principle relying on the MOSFET technology. Its fast switching capabilities, high current gain, and integrated components make this chip an excellent choice for a variety of different system power conversion and control tasks.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description