MHE1003NR3

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The MHE1003NR3 is a silicon n-channel Enhancement Mode field effect transistor designed in a low-cost, flip-chip package with a small footprint to suit a wide range of high-frequency wireless applications. This transistor has a low gate-threshold voltage and low drain-source on-resistance (RDS) making it perfect for radio-frequency (RF) power amplifiers and power management for 3G cellular and WiMAX base stations, wireless Local Area Networks (LANs), and Ultra-Wide Band (UWB) systems. The MHE1003NR3 is a proven device that is capable of high-power operation with a wide range of frequencies, low supply current, excellent linearity and high power output.

The working principle of the MHE1003NR3 is based on the operation of a field effect transistor. In this transistor, electrons in a special semiconductor material form a three-dimensional "channel" between a source and a drain. By applying a voltage between the source and gate, the current flowing through the channel is attenuated or enhanced. This is the "effect" in "field effect transistor". The amount of current that flows through the transistor is directly proportional to the applied voltage; this is the "transistor" in the "field effect transistor". The result is an adjustable current passing through the source and drain allowing the user precise control over the device\'s power output.

The MHE1003NR3 is designed to provide an excellent combination of power output and linearity in high frequency applications. It is fabricated using state-of-the-art thin-film process techniques which have made it possible to achieve efficiencies of up to 70%. The device is also well-suited for use in high-power radios for 3G cellular and WiMAX base stations, as well as in Ultra Wide-Band (UWB) systems. Additionally, its low power dissipation and improved linearity make it an ideal candidate for amplifier/multifunctional applications.

The MHE1003NR3 has a complementary P-channel counterpart, the MHP1003NR3, which shares many of the same features as the n-channel device. Both devices operate at a maximum frequency of 2.2 GHz, and are capable of achieving up to 33dB gain. The low gate-threshold voltage and low RDS allows for extremely efficient operation resulting in higher power output and excellent linearity. This makes them ideal for radio-frequency power amplifier applications up to 2.2GHz as well as in power management for 3G cellular and WiMAX base stations, wireless Local Area Networks (LANs) and Ultra-Wide Band (UWB) systems.

The MHE1003NR3 is designed to provide a reliable, cost-effective solution for high-frequency wireless applications. Its low gate-threshold voltage and low RDS provide the user with precise control over the device\'s power output. The device is capable of high-power operation with a wide range of frequencies, low supply current, excellent linearity and high power output. It is an ideal candidate for amplifier/multifunctional applications for 3G cellular and WiMAX base stations, wireless Local Area Networks (LANs), and Ultra-Wide Band (UWB) systems.

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