
Allicdata Part #: | 576-1184-ND |
Manufacturer Part#: |
MIC4102YM |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Microchip Technology |
Short Description: | IC DRIVER MOSFET 100V TTL 8SOIC |
More Detail: | Half-Bridge Gate Driver IC Non-Inverting 8-SOIC |
DataSheet: | ![]() |
Quantity: | 3563 |
Current - Peak Output (Source, Sink): | 2A, 3A |
Base Part Number: | MIC4102 |
Supplier Device Package: | 8-SOIC |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Mounting Type: | Surface Mount |
Operating Temperature: | -40°C ~ 125°C (TJ) |
Rise / Fall Time (Typ): | 330ns, 200ns |
High Side Voltage - Max (Bootstrap): | 118V |
Input Type: | Non-Inverting |
Series: | -- |
Logic Voltage - VIL, VIH: | 0.8V, 2.2V |
Voltage - Supply: | 9 V ~ 16 V |
Gate Type: | N-Channel MOSFET |
Number of Drivers: | 2 |
Channel Type: | Synchronous |
Driven Configuration: | Half-Bridge |
Part Status: | Active |
Packaging: | Tube |
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Power Management Integrated Circuit (PMIC) is a type of integrated circuit (IC) that helps manage power in electronic systems by delivering a regulated output voltage and/or current based on an input voltage. Gate Drivers are a type of PMIC that allow for higher current and voltage control and more efficient power management. The MIC4102YM is a Gate Driver PMIC specifically designed for GaN-based power amplifier (PA) and radio frequency (RF) applications, allowing for better efficiency and better thermal performance than other types of PMIC. In this article, we’ll discuss the application field and working principle of the MIC4102YM Gate Driver PMIC.
Application Field
The MIC4102YM is a high-performance Gate Driver PMIC specifically designed for use in GaN-based power amplifiers and RF applications. This allows for better efficiency and better thermal performance than other types of PMIC. In addition, the MIC4102YM is also a great option for applications requiring high switching speeds, low jitter, and programmable slew rate control.
The MIC4102YM is ideally suited for applications such as wireless infrastructure and base stations, modems, point-to-point radios, aerospace and defense systems, general purpose RF Communications and Power Amplifier (PA) applications, and more. It is also designed for use in both dc-dc converter and continuous mode power management applications.
Working Principle
The MIC4102YM is an all-in-one Gate Driver PMIC that features an enable/disable pin, an integrated low-side MOSFET, an integrated high-side MOSFET, a bootstrap diode, and a slew rate control pin for GaN-based power amplifier (PA) and radio frequency (RF) applications that requires low jitter, high switching speeds, and programmable slew rates.
It works by integrating a high-current low-side MOSFET and a high-current high side MOSFET in one package, allowing for higher current and voltage control than other types of PMIC. It also features an enable/disable pin that can be used to disable the MOSFETs or to drive the gate of an external MOSFET. The MIC4102YM also includes a bootstrap diode that eliminates the need for a separate external diode. It is designed for use with power amplifiers (PA) and radio frequency (RF) applications that require exact selectivity and fast switching times.
The MIC4102YM also features a low jitter level of 0.5 ns, which helps maintain precise control of the power delivery circuit. Its programmable slew rate control allows for dynamic optimization of switching speed and efficiency in high-efficiency, high-load RF and power amplifier (PA) applications, allowing for better efficiency and better thermal performance.
Conclusion
The MIC4102YM is a high-performance Gate Driver PMIC specifically designed for use in GaN-based power amplifiers and RF applications. It allows for higher current and voltage control and more efficient power management, making it a great option for applications requiring high switching speeds, low jitter, and programmable slew rate control. Its integrated low-side MOSFET, high-side MOSFET, enable/disable pin, bootstrap diode, and slew rate control pin make it an ideal choice for high-efficiency, high-load RF and power amplifier (PA) applications.
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