Allicdata Part #: | MIC94051YM4-TR-ND |
Manufacturer Part#: |
MIC94051YM4-TR |
Price: | $ 0.26 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microchip Technology |
Short Description: | MOSFET P-CH 6V 1.8A 8MSOP |
More Detail: | P-Channel 6V 1.8A (Ta) 568mW (Ta) Surface Mount SO... |
DataSheet: | MIC94051YM4-TR Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.23620 |
Series: | SymFET™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 6V |
Current - Continuous Drain (Id) @ 25°C: | 1.8A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs: | 160 mOhm @ 100mA, 4.5V |
Vgs(th) (Max) @ Id: | 1.2V @ 250µA |
Vgs (Max): | 6V |
Input Capacitance (Ciss) (Max) @ Vds: | 600pF @ 5.5V |
FET Feature: | -- |
Power Dissipation (Max): | 568mW (Ta) |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | SOT-143 |
Package / Case: | TO-253-4, TO-253AA |
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The MIC94051YM4-TR is a part of the E-FETTM family of depletion mode power MOSFETs from Microchip Technology. It is a single N-Channel Power MOSFET designed for power switch applications requiring up to 500 mA peak current and up to 10 Volts off-voltage. The MIC94051YM4-TR MOSFET has a very low RDS(on) which ensures very low on-state resistance in application and provides higher switching speed.
Application Field
The MIC94051YM4-TR is ideal for a variety of applications in power conversion, DC/DC and AC/DC, such as boost and buck converters, polarity reverser switches, fast switching and low power control circuits, and portable electronic equipment. It is also suitable for switching other dynamical and static electronic circuits, and can be used as an output stage in digital logic switches and audio amplifiers.
Working Principle
The MIC94051YM4-TR is a depletion mode power MOSFET. This type of MOSFET works by using the majority carriers, electrons, to form a conductive channel through the silicon gate. This is different from an enhancement mode MOSFET, which uses holes to form a conductive channel. When a voltage is applied to the gate, an electron current will flow between the drain and the source of the device. The on-state resistance of the device is equal to the drain current divided by the gate voltage applied. When no voltage is applied to the gate, the device has an infinite on-state resistance and is in a state known as "cut-off." The device is then in the off-state. The MIC94051YM4-TR is designed to reduce the charge stored at the gate which leads to a lower gate voltage for a given on-state resistance which leads to a higher switching speed.
The MIC94051YM4-TR can be operated in either the linear mode or the saturated mode. In the linear mode, the device behaves like a resistor, and the on-state resistance can be adjusted by varying the gate voltage. The saturated mode is where the device is operated at full on-state resistance with a fixed gate voltage. This mode is most commonly used when switching applications and is beneficial because it reduces switching losses. The MIC94051YM4-TR also has a built-in Body-Diode between the source and the drain which is used to prevent voltage spikes when switching off the device.
In summary, the MIC94051YM4-TR is a single N-Channel Power MOSFET designed for power switch applications requiring up to 500 mA peak current and up to 10 Volts off-voltage. It is ideal for a variety of applications in power conversion, DC/DC and AC/DC, such as boost and buck converters, polarity reverser switches, fast switching and low power control circuits, and portable electronic equipment. It is a depletion mode power MOSFET and can be operated in either the linear mode or the saturated mode.
The specific data is subject to PDF, and the above content is for reference
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