MJE700STU Allicdata Electronics
Allicdata Part #:

MJE700STU-ND

Manufacturer Part#:

MJE700STU

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP DARL 60V 4A TO126
More Detail: Bipolar (BJT) Transistor PNP - Darlington 60V 4A ...
DataSheet: MJE700STU datasheetMJE700STU Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Transistor Type: PNP - Darlington
Current - Collector (Ic) (Max): 4A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 30mA, 1.5A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 1.5A, 3V
Power - Max: 40W
Frequency - Transition: --
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Supplier Device Package: TO-126
Base Part Number: MJE700
Description

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The MJE700STU is a high-power, commercial-grade transistor device. It is a single-channel transistor used in many applications, including audio, RF and power amplifier circuits, switching power supplies, current source and current mirror circuits, and various frequency control circuits. It is a widely-used device, due to its excellent performance, robust construction, and wide variety of voltage and current ranges.

As a single-channel transistor, the MJE700STU has two input connections, each connected to a base electrode. When a bias voltage is applied to the base electrodes, the voltage causes the transistor to amplify a signal to a higher or lower output level. As the bias voltage changes, the output level changes accordingly. Additionally, the transistor can be used in a switching power supply, where the transistor works as a switch between two different current paths. Depending on the applied voltage, the device can be used to alternately connect or disconnect two different power paths.

The MJE700STU transistor is constructed from polysilicon gate technology and can be used to operate over a wide range of temperatures and voltage levels. This technology provides the device with superior high-power operation, low power loss and excellent stability. The device also has a wide common-mode range, which allows the circuit to function even with a large input differential voltage. Additionally, the device is designed with a low-noise characteristics, allowing it to operate more efficiently when doing noise-sensitive functions.

The MJE700STU is also designed to be used in many different circuits, such as audio amplifiers, RF amplifiers, switching power supplies, linear voltage regulators, and so on. For these applications, it is necessary to know the working principle of the device. The principle is simple: applying a bias voltage to the base electrodes of the transistor causes a current flow in the device, which amplifies the voltage to a higher or lower output level.

The working principle of the MJE700STU is essentially the same as that of other single-channel transistors. The operating characteristics, however, can vary dramatically depending on the particular application for which the device is used. For example, in a current source application, a large collector current accurs when a small base current is supplied to the device. Additionally, the device can handle high frequencies in a wide variety of circuits, making it suitable for use in high-speed switching applications.

In conclusion, the MJE700STU is a widely-used high-power, commercial-grade transistor device that can be used in a variety of applications. It is constructed from polysilicon gate technology, providing superior performance and reliability. The device also has a wide common-mode range and low-noise characteristics, making it suitable for noise-sensitive functions. The working principle of the device is based on the application of a voltage to the base electrodes, causing a current to flow that results in an output.

The specific data is subject to PDF, and the above content is for reference

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