MJE702G Allicdata Electronics
Allicdata Part #:

MJE702GOS-ND

Manufacturer Part#:

MJE702G

Price: $ 0.48
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP DARL 80V 4A TO225AA
More Detail: Bipolar (BJT) Transistor PNP - Darlington 80V 4A ...
DataSheet: MJE702G datasheetMJE702G Datasheet/PDF
Quantity: 2156
1 +: $ 0.43470
10 +: $ 0.37107
100 +: $ 0.27689
500 +: $ 0.21756
1000 +: $ 0.16812
Stock 2156Can Ship Immediately
$ 0.48
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Transistor Type: PNP - Darlington
Current - Collector (Ic) (Max): 4A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 30mA, 1.5A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 1.5A, 3V
Power - Max: 40W
Frequency - Transition: --
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Supplier Device Package: TO-225AA
Base Part Number: MJE702
Description

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The MJE702G is a type of single bipolar junction transistor (BJT) that can be used in applications requiring low power and medium-speed switching. It was designed to provide efficient operation and to offer stability when used as an amplifier or in other digital circuits. The device is characterized by its 30V collector-to-base breakdown voltage, 500mA collector current, and low collector-to-emitter voltage drop. It also features short switching times and low power dissipation.

The working principle of the MJE702G is based on the basic BJT operating principle, which involves the application of a small current – known as the base current – to control a larger current flowing from the collector to the emitter. This larger current is limited by the BJT’s intrinsic resistance, referred to as its hFE (or gain), and is also affected by the voltage being impressed upon the device. By controlling the base current, the output current can be adjusted accordingly. This is known as current gain, and it is usually expressed as the ratio I_c/I_b.

The MJE702G can be used in a variety of applications, including digital logic circuits, motor control circuits, switching circuits, amplifier circuits, and power supply circuits. In these applications, the device is intended to offer high speed and low power consumption. It can be used as an amplifier or in circuits that require level shifting and switching, as well as protection devices. Additionally, it can be used in applications that do not require the full power of a BJT, such as capacitive loads.

Another application of the MJE702G is as a current source. The device can be used to effectively source a steady current from a low-output voltage, such as battery or a solar cell. This is accomplished by connecting the transistor’s collector to the supply voltage and its emitter to the load. This configuration will provide a constant current to the load and can be adjusted by changing the base current. This type of current source can provide significant power savings and can be used in a variety of applications, such as LED lighting, motors, and solar panels.

The MJE702G is a versatile device that can be used in a variety of applications, offering excellent performance and stability. It can be used as an amplifier, a current source, and a switching device, enabling efficient and reliable operation. The device is also characterized by its low power and short switching times, making it an ideal choice for low-power applications.

The specific data is subject to PDF, and the above content is for reference

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