Allicdata Part #: | MJE703-ND |
Manufacturer Part#: |
MJE703 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP DARL 80V 4A TO-225 |
More Detail: | Bipolar (BJT) Transistor PNP - Darlington 80V 4A ... |
DataSheet: | MJE703 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vce Saturation (Max) @ Ib, Ic: | 2.8V @ 40mA, 2A |
Current - Collector Cutoff (Max): | 100µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 750 @ 2A, 3V |
Power - Max: | 40W |
Frequency - Transition: | -- |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-225AA, TO-126-3 |
Supplier Device Package: | TO-225AA |
Base Part Number: | MJE703 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | PNP - Darlington |
Current - Collector (Ic) (Max): | 4A |
Voltage - Collector Emitter Breakdown (Max): | 80V |
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A MJE703 is a general-purpose bipolar junction transistor (BJT) used for switching and amplifying electrical signals. It is part of the MJE7 family, which is designed for low-to-medium power applications, such as audio amplifiers, switching power supplies, and motor control circuits.
BJTs are three-terminal devices, with emitter, base, and collector contacts. The MJE703 is a NPN (negative-positive-negative) transistor, meaning that the current flowing between the emitter and base (known as the base current) is the controlling factor in the amount of current flowing between the collector and emitter (known as the collector current).The MJE703’s base current is controlled by an external voltage. The base-emitter voltage (also known as VBE or Vce) of the MJE703 typically ranges between 0.6V and 1.5V.
The MJE703’s performance and applications can be further understood by analyzing its characteristics. The maximum collector current (Ic) of the MJE703 is 800 mA, while the maximum collector-emitter voltage (Vce) is 40V. The transistor also has a maximum power dissipation of 400 mW when dissipating heat at room temperature. The MJE703 is rated to operate at a maximum junction temperature of 225°C.
The MJE703’s main application is in amplifier circuits, where it can be used to increase the signal gain of a signal. By applying an input signal to the base of the transistor, the signal current is amplified by the transistor’s current gain, often referred to as hFE. The MJE703\'s current gain ranges between 600 and 650, which is relatively high compared to other transistors. This makes the MJE703 a good choice for amplifier circuits requiring a high gain.
The MJE703 can also be used in switching circuits. Its high current gain makes it ideal for switching applications, where it can be used to rapidly switch signals from one state to another. The MJE703 is particularly well suited for high-speed applications, as its switching speed is very fast.
The MJE703 is also used in motor control circuits. When used in this application, the transistor’s high current gain allows it to rapidly and accurately control the supply voltage to the motor. The MJE703 can also be used as a free-running oscillator, in which the transistor’s high current gain is used to maintain a constant frequency of oscillation.
The MJE703 is a versatile transistor, with numerous applications in both analog and digital circuits. It is commonly used as an amplifier, switch, or motor control circuit, as well as in oscillator circuits. Its high current gain and relatively low cost make it a popular choice for a wide variety of electronics projects.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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MJE703 | ON Semicondu... | 0.0 $ | 1000 | TRANS PNP DARL 80V 4A TO-... |
MJE701STU | ON Semicondu... | 0.0 $ | 1000 | TRANS PNP DARL 60V 4A TO1... |
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MJE703STU | ON Semicondu... | 0.0 $ | 1000 | TRANS PNP DARL 80V 4A TO1... |
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