MJE703STU

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Transistors - Bipolar (BJT) - Single

The MJE703STU is a vertical NPN Silicon Epitaxial Darlington transistor in a TO-126 package with the collector-emitter voltage rated up to 400V and the collector-base voltage rated up to 500V. It is designed for use in power switching applications such as relay drivers, motor control and switchmode supplies.

Application Field

The MJE703STU is suitable for use in applications such as DC-to-DC converters, UPS, SMPS, Inverters, Motor Control and Home Appliances. Further applications include relay drivers, switchmode power supplies and pulse switching circuits.

Working Principle

The MJE703STU works by allowing current to flow through it which is controlled by the voltage or current of its input signal, which is applied to one or more control electrodes. These control electrodes determine whether the transistor is switched on or off. When switched on, the current flowing from the collector to the emitter will be controlled by the input signal and the resistor connected to the transistors output.

The MJE703STU also has a maximum collector power dissipation of 1000mW, so it can handle up to 10A of peak collector current. The maximum operating junction temperature is 175º C, so it can handle up to 400V for the collector-emitter voltage.

Conclusion

The MJE703STU is a vertical NPN Silicon epitaxial Darlington transistor in a TO-126 package. It is designed for use in power switching applications such as relay drivers, motor control and switchmode supplies. It is suitable for a range of applications as outlined above, with a maximum collector power dissipation of 1000mW and a junction temperature of 175ºC.

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