MJE801STU

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The MJE801STU is a commonNPN, planar epitaxial transistor designed for use in medium-power switching and amplifier applications. It is a member of the 802 series of devices developed by Motorola for general-purpose industrial use and is housed in the STU (small duipak) plastic case. This transistor is ideally suied for a wide variety of analog and digital circuits and applications, including power control, automatic speed control, switching, and linear amplification.

The operating principle of the MJE801STU revolves around the creation and manipulation of an electric field between two metal layers within the transistor. This electric field is produced when electrons move through the device, resulting in the activation and deactivation of internal components such as the collector, base and emitter. This movement of electrons is called the ‘switching effect’ and it is this phenomenon that allows the MJE801STU to control and regulate the power of the current passing through it.

TheMJE801STU is a general-purpose NPN transistor with medium power switching and amplification capabilities. It is constructed using a planar epitaxial structure, with a PN (p-type) layer being deposited on the N (n-type) vertically aligned junction for better thermal performance and breakdown voltage. The base region consists of two levels of metal layers, which act as a part of the transistor, and can be used to control the current flow. The collector region is made up of a single metal layer and is responsible for collecting the electron flow to ensure that all the current passing through the device is controlled.

The MJE801STU has a wide range of operating frequencies, which make it suitable for many industrial and commercial applications. It has a moderately low voltage drop across the transistor of around 3 volts and can handle a maximum collector current of up to 15 amperes. The maximum frequency of operation is around 1 MHz. The maximum collector-emitter voltage (Vce) is 60V and the power dissipation rating is 150W.

The key feature of the MJE801STU is its ability to control the current flowing through it. This is achieved by adjusting the voltage applied to the base terminal, which varies the electric field between the metal layers. When this voltage is increased, the electric field between the metal layers becomes stronger, allowing more current to flow through the transistor. Conversely, when this voltage is lowered, the electric field is weakened and the current is reduced.

The MJE801STU is also designed to have a very low power consumption when idle, making it an ideal choice for applications requiring efficient power management. With its excellent switching characteristics, wide operating frequency range and low power consumption, the MJE801STU is an ideal choice for low to medium power applications. The device\'s compact size and relatively low cost make it an attractive option for many small and medium sized businesses.

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