MJE803G

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

MJE803G Application Field and Working Principle

The MJE803G is a bipolar junction transistor (BJT) with a single monolithic structure. It is intended for use as power amplification in low power audio amplifiers, low voltage switching, and in applications such as light dimmers, motor control, and transistor radio circuits. This transistor integrates innovative design concepts, superior process technology and high-quality material systems to meet the demands of higher speed operation, reliable performance, and improved pulse response in its operation. In this article, we will discuss the application field and working principle of the MJE803G.

Application Field

The MJE803G can be used in low power audio amplifiers and low voltage switching, providing greater reliability compared to other types of switching transistors. It can also be used as a light dimmer, motor control, and in transistor radio circuits. The high-pressure die casting structure of the MJE803G integrated with improved process technology makes it suitable for use in these applications. In addition, its superior thermal resistance allows it to perform superiorly even when under elevated temperatures. Due to these features, the MJE803G is often used in industrial equipment and home appliances.

Working Principle

The MJE803G relies on the principle of a bipolar junction transistor (BJT) to modulate the current or voltage signal in its operation. A bipolar junction transistor has three elements - the base, the emitter, and the collector. The base is a junction formed between two different types of semiconductor materials, while the emitter is the current source and the collector is the current sink. When the base is positively charged, current flows from the emitter to the collector through the base, thus outputting a signal.

To regulate the current flow, the emitter and collector regions on the MJE803G are configured in an NPN structure. An NPN type bipolar junction transistor is actually an inverter, meaning it produces the opposite output for a given input. The base-emitter voltage (VBE) defines the current level in this type of bipolar junction transistor, so a low VBE results in a high current level. The MJE803G can further increase the current level by increasing the collector voltage (VCE).

Conclusion

The MJE803G is a single bipolar junction transistor (BJT) designed for a wide range of applications, such as low voltage switching, light dimmers, motor control, and transistor radio circuits. Its innovative design concepts, superior process technology, and high-quality material systems make it suitable for these applications. The working principle of the MJE803G hinges on the principle of a bipolar junction transistor, in which three elements - the base, the emitter, and the collector - modulate the current or voltage signal in its operation. The emitter and collector regions of the MJE803G are configured in an NPN structure, and the base-emitter voltage (VBE) and the collector voltage (VCE) can be manipulated to increase the current level in its operation.

The specific data is subject to PDF, and the above content is for reference