MJE802STU Allicdata Electronics
Allicdata Part #:

MJE802STU-ND

Manufacturer Part#:

MJE802STU

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN DARL 80V 4A TO126
More Detail: Bipolar (BJT) Transistor NPN - Darlington 80V 4A ...
DataSheet: MJE802STU datasheetMJE802STU Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 4A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 30mA, 1.5A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 1.5A, 3V
Power - Max: 40W
Frequency - Transition: --
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Supplier Device Package: TO-126
Base Part Number: MJE802
Description

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Transistors are a type of component used in the electrical engineering field, and in particular, the MJE802STU transistor is a component of this type. The MJE802STU transistor is a single bipolar junction transistor (BJT) fabricated in a TO-220 can package. This transistor is also ideal for use in applications in power switches, low-frequency transistors and small signal applications.

The MJE802STU transistor has a number of parameters that are important to consider when selecting and using the device. First, the transistor is rated at a maximum DC current of 1.2A, a collector-base voltage of 80V and an emitter-base voltage of 1.5V. Other important parameters to consider are the collector-emitter voltage (Vce) and the power dissipation, which are 80V and 250°C/W, respectively. The maximum anticipated junction temperature, Tj, of the device should not exceed 150°C.

The working principle of the MJE802STU transistor is based on the operation of bipolar junction transistors, which use two P-N junctions, one controlling the current flow and the other carrying current. Essentially, the MJE802STU transistor is a three-terminal device with a controlled current flow between the collector and emitter terminals, depending on the amount of voltage applied to the base terminal. When a voltage is applied to the base terminal, the transistor becomes forward-biased, allowing current to flow from the collector to the emitter. When the base voltage is removed, the transistor becomes reverse-biased, thus cutting off the current flow.

Due to their voltage-controlled current operation, the MJE802STU transistor can be used in a wide variety of applications, such as power switching, low-frequency amplifying, switching circuits and signal processing. One example of a power-switching application is the classic use of the BJT in a relay, where the transistor acts as a current switch, controlling the flow of current between the relay\'s circuit and the power supply. Low-frequency amplifying circuits can make use of the MJE802STU transistor to provide current and voltage gain in the output circuit, while analog and digital signal processing circuits can use it as an amplifier or as a logic switch.

The MJE802STU transistor can also be used as a switch in an automotive application. For example, in a car\'s electrical system, the transistor can be used to control the flow of voltage to different components, such as the headlights, wipers, and so on. By controlling the current flow with the MJE802STU transistor, the car can be powered up in a safe and efficient manner.

In conclusion, the MJE802STU transistor is a great choice for a wide range of applications in the electrical engineering field. Its operation is based on the proven principle of bipolar junction transistors, and its rated parameters offer great flexibility and performance in the used application. The MJE802STU transistor can be used for power switching, low-frequency amplifying and signal processing, as well as for automotive applications.

The specific data is subject to PDF, and the above content is for reference

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