MJE803STU Allicdata Electronics
Allicdata Part #:

MJE803STU-ND

Manufacturer Part#:

MJE803STU

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN DARL 80V 4A TO126
More Detail: Bipolar (BJT) Transistor NPN - Darlington 80V 4A ...
DataSheet: MJE803STU datasheetMJE803STU Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 4A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 2.8V @ 40mA, 2A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V
Power - Max: 40W
Frequency - Transition: --
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Supplier Device Package: TO-126
Base Part Number: MJE803
Description

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The MJE803STU is a single bi-polar (BJT) transistor designed for use in a wide variety of fields. It is a NPN transistor, meaning that its base-emitter junction is able to conduct current when a positive voltage is applied. It is commonly used in the protection of switching circuits, power supplies, signal amplification, signal rectification, and in many other applications.

The transistor is made out of a silicon die, giving it a low threshold voltage and low switch voltage, making it ideal for use in environments where high power and speed are necessary. The NPN structure also allows for efficient signal amplification when used in audio processing, as the emitter-base junction is able to act as a negative voltage gain amplification stage. The transistor is also known for its robustness, making it a reliable component for use in a variety of conditions.

The working principle of the MJE803STU is simple yet effective. It operates by using a small change in the base-emitter voltage to cause a large change in the collector-emitter voltage, making it possible for the transistor to act as an amplifier. This works by allowing current to flow through the base-emitter junction, making the transistor act as an activation switch when a small voltage is applied to the base. When a larger voltage is applied, the transistor is activated and the collector-emitter voltage is increased, thus amplifying the input signal.

The MJE803STU is a versatile component which can be used in many applications. It finds its use in the protection of switching circuits and power supplies, as its small base voltage makes it easy to turn the transistor on and off. The transistor is also useful in audio processing, as its small base voltage allows for efficient signal amplification, while its robustness allows it to be used in a variety of conditions. Lastly, the transistor can be used in signal rectification, allowing for cleaner and more efficient signals.

In conclusion, the MJE803STU is a single bi-polar (BJT) transistor designed for use in a wide variety of fields. Its NPN structure allows for efficient signal amplification and its robustness makes it a reliable component for use in a variety of conditions. The transistor operates by using a small change in the base-emitter voltage to cause a large change in the collector-emitter voltage, making it possible for the transistor to act as an amplifier. It finds its use in the protection of switching circuits and power supplies, audio processing, and in signal rectification.

The specific data is subject to PDF, and the above content is for reference

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