| Allicdata Part #: | MJF127GOS-ND |
| Manufacturer Part#: |
MJF127G |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | TRANS PNP DARL 100V 5A TO220FP |
| More Detail: | Bipolar (BJT) Transistor PNP - Darlington 100V 5A ... |
| DataSheet: | MJF127G Datasheet/PDF |
| Quantity: | 3450 |
| Series: | -- |
| Packaging: | Tube |
| Part Status: | Active |
| Transistor Type: | PNP - Darlington |
| Current - Collector (Ic) (Max): | 5A |
| Voltage - Collector Emitter Breakdown (Max): | 100V |
| Vce Saturation (Max) @ Ib, Ic: | 3.5V @ 20mA, 5A |
| Current - Collector Cutoff (Max): | 10µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 2000 @ 3A, 3V |
| Power - Max: | 2W |
| Frequency - Transition: | -- |
| Operating Temperature: | -65°C ~ 150°C (TJ) |
| Mounting Type: | Through Hole |
| Package / Case: | TO-220-3 Full Pack |
| Supplier Device Package: | TO-220FP |
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The transistors are of two types – bipolar junction transistors (BJT) and field-effect transistors (FET). Single transistors belong to BJT family and constitute a minority group among the semiconductors. The MJF127G is one of these single transistors. It is an N-channel enhancement mode MOSFET, manufactured by companies such as ON Semiconductor. It is built using the latest planar MOSFET process.
The MJF127G is designed for use in linear or switching power applications, and boasts some of the best features to help designers achieve their aims. It features an SOIC-8 easy-to-use package that suits difficult mountings. Although this package measures only 8.7 x 4.1 x 2 mm, it is highly efficient in dissipating heat, thanks to its thick lead frames and advanced die construction. Its high power density of 9 W/mm2 makes it ideal for applications in the automotive and industrial sectors.
The MJF127G offers low gate threshold voltage VGS(th) and maximum on-state drain current of IPM. This reduces gate losses and improves power efficiency. The MJF127G also has low drain to source ON-state resistance RDS(on), which minimizes Conduction losses. Its high blocking voltage of VDSS helps to ensure safe operation in higher power applications. The built-in body diode can support both forward and reverse biasing.
The working principle of MJF127G is related to the biasing conditions and the application requirements. When the gate is connected to the source and the gate voltage VGS is below the threshold voltage VGS(th), the conduction path between drain and source is kept in an OFF state and no current flows. When the gate is supplied with a gate source voltage VGS above the threshold voltage VGS(th), it induces an conducting channel between source and drain. Thus, the current between drain and source turns ON. The current between source and drain depends on the gate voltage VGS. This is how the transistor works and it is entirely dependent on the application requirements.
Due to its high performance and low on-state resistance, the MJF127G transistor is commonly used in power management applications in the Automotive and industrial sectors, such as switching and linear DC-DC converters, LED lighting, power supply switching, and motor driver circuits. It is also ideal for applications that require high current and low power yet also require a small form factor.
The MJF127G transistor is one of the quite significant devices in the single family of transistors. It has a unique set of features, such as high power density, high input impedance, low gate threshold voltage, low on-state resistance, low operating voltage, and fast switching. This makes the MJF127G one of the best choices for high-performance power switching applications, as it can offer lower power consumption, greater efficiency, and higher power density.
The specific data is subject to PDF, and the above content is for reference
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MJF127G Datasheet/PDF