MJF15030G

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Introduction to MJF15030G

The MJF15030G, manufactured by ON Semiconductor, is a single high voltage, insulated gate HEXFET power MOSFET transistor. It provides high power density, low thermal resistance, excellent ESD protection and a wide operating temperature range. Typical applications include audio amplifiers, switched-mode power supplies and other power circuits.

Features of MJF15030G

• Maximum Drain Source Voltage: 600V
• Power Dissipation: 60W
• On-state Drain-Source Resistance: 1.3 ohms
• Gate-source Voltage: 20V
• Operating Temperature Range: -55°C to 150°C

Application Fields of MJF15030G

The MJF15030G transistor can be used in a wide variety of applications, including:

• Switch-mode power converters
• High voltage power supplies
• DC-DC converters
• High performance audio amplifiers
• Deflection circuits
• Voltage regulator circuits

Working Principle of MJF15030G

The MJF15030G is a high voltage insulated, gate HEXFET power MOSFET, which is used in power switching applications. It consists of a vertical N-type channel between its source and drain, and three gate connections. The gate connections control the current between the source and drain. When the gate voltage is changed, the current between the source and drain changes accordingly.

When the gate voltage is 0V, a depletion region forms around the gate and the current flow between the source and drain is blocked. When the gate voltage is raised above a certain threshold, the depletion region shrinks, and the drain-source current flow increases.

The MOSFET has a low gate turn-on voltage and low gate drive power, which makes it suitable for high speed switching applications. The MOSFET also has a high linearity current gain, which is important for audio amplifier applications. The on-state drain-source resistance of the MOSFET is low, which helps to reduce power losses and improve efficiency.

The drain-source breakdown voltage of the MOSFET is 600V, which is suitable for high voltage applications such as switch-mode power supplies and DC-DC converters.

Conclusion

The MJF15030G transistor is a single high voltage, insulated gate HEXFET power MOSFET, which can be used in a wide range of applications, including audio amplifiers, switched-mode power supplies and other power circuits. It has a low gate turn-on voltage and low gate drive power, and an on-state drain-source resistance of 1.3 ohms, which helps to reduce power losses and improve efficiency. The drain-source breakdown voltage of the MOSFET is 600V, which is suitable for high voltage applications.

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