MJF18008

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The MJF18008 is a single bipolar junction transistor ( BJT ) device, designed to offer unsurpassed levels of performance in a wide range of applications. The device has been designed to provide a very high current gain, low turn-on voltage, low power consumption and an improved thermal resistance.

The MJF18008 is a PNP transistor. It has an NPN transistor on the same die. It features an epitaxial silicon planar PNP transistor structure and its high current gain, low turn-on voltage, low leakage and long-term stability in a wide range of electrical and environmental conditions make it an ideal choice for many types of applications.

The MJF18008 has a low current rating of 5mA at a minimum collector current of 5mA. Its maximum collector current is 50mA and its maximum collector-emitter voltage is 80V. The maximum current gain of the device is 80, meaning that it can achieve a minimum of 80 times the current rate of the minimum collector current.

The MJF18008 can be used in a wide variety of applications, such as audio power amplifier, RF power amplifier, audio frequency converter, switched-mode power supply, lighting and other motor control applications. It has been designed to provide excellent power handling capability, and its low turn-on voltage allows for excellent energy efficiency, even in applications where switch-off performance is critical.

The working principle of the MJF18008 is based on the fact that it has a low voltage drop from its collector to its base and from its base to its emitter, as well as a low current flow from its collector to its emitter. This means that a relatively large amount of current can be passed through the device, with a relatively low input voltage. The collector-emitter voltage remains relatively constant, even when the input voltage is changed.

The MJF18008 also features a low thermal resistance. This allows the device to maintain its temperature during operation, resulting in increased reliability and improved energy efficiency.

Overall, the MJF18008 is a very versatile and efficient single bipolar junction transistor device. It has excellent current and voltage characteristics, making it an excellent choice for a variety of applications. Its low-on voltage makes it ideal for energy efficiency, and its low thermal resistance allows its temperature to be maintained during operation.

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