MJF15031G

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The MJF15031G is a single bipolar junction transistor (BJT) designed for a variety of applications. It is a Darlington device that consists of two base-collector junctions characteristic of a BJT. The MJF15031G transistors are well suited for pre-amplification, small signal amplification, and low frequency switching. They are compatible with a variety of low voltage power supplies, such as those used in automotive and consumer electronics applications.

The MJF15031G employs a Darlington configuration type, which integrates two base-collector junctions on one active device. This type of BJT configuration allows higher current gains in low power consumption while also providing low noise and stable operation. The device features a minimum current gain of 900 and a maximum current gain of 1910, making it an ideal choice for various applications where high gain is needed.

The MJF15031G is manufactured with a 1 watt insulated power dissipation, which provides superior thermal management, allowing it to be used in high power applications. The insulation layer also helps to reduce thermal runaway, improving the device’s performance and reliability. The operating temperature range of the device is -65°C to +150°C, which makes it well suited for use in a variety of environmental conditions.

The MJF15031G BJT is an easy-to-use device that comes in a variety of packages. It is commonly used in automotive, consumer electronics, and communication applications. The device is available in TO-92, SOT-23, and SC-70 packages, providing flexibility and versatility for users. Aside from its ease of use and low cost, the BJT is also resistant to shock and vibration, making it an ideal choice for many applications.

The MJF15031G BJT is a versatile and easy-to-use device that can be used in various applications. It provides high current gain with low power consumption, making it ideal for pre-amplification, small signal amplification and low frequency switching. The insulated power dissipation feature makes it suitable for use in high power applications, while its temperature range of -65°C to +150°C makes it tolerant of a variety of environmental conditions. Its wide range of packaging options adds flexibility and finally, it is resistant to shock and vibration, ensuring the device’s reliability.

The specific data is subject to PDF, and the above content is for reference