MKE38RK600DFELB Allicdata Electronics
Allicdata Part #:

MKE38RK600DFELB-ND

Manufacturer Part#:

MKE38RK600DFELB

Price: $ 16.64
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 600V 50A SMPD
More Detail: N-Channel 600V 50A (Tc) Surface Mount ISOPLUS-SMP...
DataSheet: MKE38RK600DFELB datasheetMKE38RK600DFELB Datasheet/PDF
Quantity: 1000
45 +: $ 15.12460
Stock 1000Can Ship Immediately
$ 16.64
Specifications
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Package / Case: 9-SMD Module
Supplier Device Package: ISOPLUS-SMPD™.B
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): --
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 100V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V
Series: CoolMOS™
Rds On (Max) @ Id, Vgs: 45 mOhm @ 44A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tray 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The MKE38RK600DFELB is a single field-effect transistor (FET) designed for use in high frequency and power management operations. As a type of transistor, it is composed of a semiconductor material between two electrodes and functions as a switch allowing electricity to flow when a voltage is applied. This type of FET is also known as a metal–oxide–semiconductor FET (MOSFET) due to the layer of insulating oxide which it has.

In terms of its application field, the MKE38RK600DFELB is used in high frequency radio communication systems, mobile communication systems, and power management operations. It is primarily used to control the voltage or power which is supplied to the system or device in which it is installed. This includes controlling the amount of current which is supplied to the system or device.

The working principle of the MKE38RK600DFELB involves the use of electric signals controlling the flow of electrons through the device, which in turn controls the amount of power or voltage being supplied. To be specific, when a positive gate voltage is applied to the Gate terminal the electrons flow through the MOSFET and the voltage is allowed to pass, allowing a higher power level to be achieved. Additionally, when a negative gate voltage is applied to the Gate terminal, no electrons flow through the MOSFET, effectively blocking the voltage and thereby reducing the power flowing through the device.

The MKE38RK600DFELB is designed to handle high current and generate low power losses in its operation, and as such is a high-performance device for high-frequency and power management operations. Additionally, since the construction of the device does not involve the use of any moving parts, the device is highly reliable and will last for a long time.

To conclude, the MKE38RK600DFELB is a single field-effect transistor which is used in radio communication systems, mobile communication systems, and power management operations. Its working principle involves the use of electric signals controlling the flow of electrons through the device to control the amount of power or voltage supplied. As such, it is a high-performance device which is reliable, durable, and well suited to its applications.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "MKE3" Included word is 6
Part Number Manufacturer Price Quantity Description
MKE38P600LB-TRR IXYS 25.16 $ 1000 MOSFET N-CH 600V 50A SMPD...
MKE38P600TLB-TRR IXYS 27.09 $ 1000 MOSFET N-CHMosfet Array ...
MKE38P600LB IXYS 27.07 $ 1000 MOSFET N-CH 600V 50A SMPD...
MKE38P600TLB IXYS 27.09 $ 1000 MOSFET N-CHMosfet Array ...
MKE38RK600DFELB-TRR IXYS 15.46 $ 1000 MOSFET N-CH 600V 50A SMPD...
MKE38RK600DFELB IXYS 16.64 $ 1000 MOSFET N-CH 600V 50A SMPD...
Latest Products
IRFL31N20D

MOSFET N-CH 200V 31A D2PAKN-Channel 200V...

IRFL31N20D Allicdata Electronics
IXTT440N055T2

MOSFET N-CH 55V 440A TO-268N-Channel 55V...

IXTT440N055T2 Allicdata Electronics
IXTH14N80

MOSFET N-CH 800V 14A TO-247N-Channel 800...

IXTH14N80 Allicdata Electronics
IXFT23N60Q

MOSFET N-CH 600V 23A TO-268(D3)N-Channel...

IXFT23N60Q Allicdata Electronics
IXTT72N20

MOSFET N-CH 200V 72A TO-268N-Channel 200...

IXTT72N20 Allicdata Electronics
IXFT9N80Q

MOSFET N-CH 800V 9A TO-268N-Channel 800V...

IXFT9N80Q Allicdata Electronics