Allicdata Part #: | MKE38RK600DFELB-ND |
Manufacturer Part#: |
MKE38RK600DFELB |
Price: | $ 16.64 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 600V 50A SMPD |
More Detail: | N-Channel 600V 50A (Tc) Surface Mount ISOPLUS-SMP... |
DataSheet: | MKE38RK600DFELB Datasheet/PDF |
Quantity: | 1000 |
45 +: | $ 15.12460 |
Series: | CoolMOS™ |
Packaging: | Tray |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 600V |
Current - Continuous Drain (Id) @ 25°C: | 50A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 45 mOhm @ 44A, 10V |
Vgs(th) (Max) @ Id: | 3.5V @ 3mA |
Gate Charge (Qg) (Max) @ Vgs: | 190nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 6800pF @ 100V |
FET Feature: | -- |
Power Dissipation (Max): | -- |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | ISOPLUS-SMPD™.B |
Package / Case: | 9-SMD Module |
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The MKE38RK600DFELB is a single field-effect transistor (FET) designed for use in high frequency and power management operations. As a type of transistor, it is composed of a semiconductor material between two electrodes and functions as a switch allowing electricity to flow when a voltage is applied. This type of FET is also known as a metal–oxide–semiconductor FET (MOSFET) due to the layer of insulating oxide which it has.
In terms of its application field, the MKE38RK600DFELB is used in high frequency radio communication systems, mobile communication systems, and power management operations. It is primarily used to control the voltage or power which is supplied to the system or device in which it is installed. This includes controlling the amount of current which is supplied to the system or device.
The working principle of the MKE38RK600DFELB involves the use of electric signals controlling the flow of electrons through the device, which in turn controls the amount of power or voltage being supplied. To be specific, when a positive gate voltage is applied to the Gate terminal the electrons flow through the MOSFET and the voltage is allowed to pass, allowing a higher power level to be achieved. Additionally, when a negative gate voltage is applied to the Gate terminal, no electrons flow through the MOSFET, effectively blocking the voltage and thereby reducing the power flowing through the device.
The MKE38RK600DFELB is designed to handle high current and generate low power losses in its operation, and as such is a high-performance device for high-frequency and power management operations. Additionally, since the construction of the device does not involve the use of any moving parts, the device is highly reliable and will last for a long time.
To conclude, the MKE38RK600DFELB is a single field-effect transistor which is used in radio communication systems, mobile communication systems, and power management operations. Its working principle involves the use of electric signals controlling the flow of electrons through the device to control the amount of power or voltage supplied. As such, it is a high-performance device which is reliable, durable, and well suited to its applications.
The specific data is subject to PDF, and the above content is for reference
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