MKE38P600LB

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The MKE38P600LB is a single N-Channel Enhancement Mode Power MOSFET device. It is able to handle up to 600V and has a maximum peak drain current of 22A. This device is suitable for a wide range of applications such as switching, voltage level shifting, power conversion and other power driving circuits.

Application Field of MKE38P600LB

The MKE38P600LB can be used in a variety of applications including but not limited to:

• Switching power supplies
• DC motor drives
• White goods
• Industrial automation machinery
• Deflection and high voltage circuits

The MKE38P600LB is a highly efficient and reliable single N-Channel Power MOSFET device. It has a low gate voltage threshold that allows it to be operated with a wide variety of logic levels. The device also has a low RDS(ON) that allows it to operate at the lowest possible temperatures. This device is also very reliable, with a wide operation temperature range and good junction to ambient thermal resistance.

Working Principle of MKE38P600LB

The MKE38P600LB is a N-Channel Mosfet with an enhancement mode structure. This device consists of a metal oxide semiconductor field effect transistor (MOSFET) with an insulated gate. The insulation layer prevents the transistor from turning on and maintain it at the off state. When a gate voltage higher than the threshold voltage is applied, free electrons are attracted from the source to drain and the transistor turns on.

When the MOSFET is in the on-state, electrons flow from source to drain and current is conducted through the transistor. The drain-source resistance (RDS(ON)) of the device is proportional to the gate voltage at a given temperature. This resistance is an effective measure of the dissipated power within the device.

The MKE38P600LB has a maximum peak drain current of 22A and is designed to handle high voltage applications. This allows it to be used in switching power supplies, DC motor driving and other power driving applications. It has a low input capacitance and a high dV/dt threshold which helps to protect the device from electro-static discharge (ESD) damage.

In summary, the MKE38P600LB is a single N-Channel Enhancement Mode Power MOSFET device that is suitable for a variety of applications including switching, voltage level shifting, power conversion and other power driving circuits. It has a low gate voltage threshold, a low RDS(ON) and is highly reliable. The device is able to handle up to 600V and has a maximum peak drain current of 22A.

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