MM5Z7V5T1G Discrete Semiconductor Products |
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Allicdata Part #: | MM5Z7V5T1GOSTR-ND |
Manufacturer Part#: |
MM5Z7V5T1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | DIODE ZENER 7.5V 500MW SOD523 |
More Detail: | Zener Diode 7.5V 500mW ±6% Surface Mount SOD-523 |
DataSheet: | MM5Z7V5T1G Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 7.5V |
Tolerance: | ±6% |
Power - Max: | 500mW |
Impedance (Max) (Zzt): | 15 Ohms |
Current - Reverse Leakage @ Vr: | 1µA @ 5V |
Voltage - Forward (Vf) (Max) @ If: | 900mV @ 10mA |
Operating Temperature: | -65°C ~ 150°C |
Mounting Type: | Surface Mount |
Package / Case: | SC-79, SOD-523 |
Supplier Device Package: | SOD-523 |
Base Part Number: | MM5Z7V5 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Diodes - Zener - Single: MM5Z7V5T1G Application Field and Working Principle
A Zener diode is a type of diode that uses the reversed breakdown voltage in the junction of the p-n junctions. The MM5Z7V5T1G is an example of a Zener diode. It is one of the most commonly used diodes due to its versatility and wide range of application fields. This article will explain the application field and working principle of the MM5Z7V5T1G.
Application Field
The MM5Z7V5T1G is used in various applications due to its versatility and low voltage reverse breakdown capability. It can be used with minimal size and weight, making it suitable for a variety of applications where size and weight are critical parameters.
One of the most common applications of the MM5Z7V5T1G is in voltage regulation and voltage-dependent circuit protection. The low voltage breakdown voltage of the MM5Z7V5T1G makes it ideal for applications such as overvoltage protection devices, dumping extra current into the surrounding circuit, stabilizing digital and analog signals, and forming a negative temperature coefficient (NTC) in a digital circuit.
The MM5Z7V5T1G can also be used in digital logic or radio frequency applications, as well as in switching circuits where it is used to provide a fast response to turn on/off in high-speed circuits. In radio frequency applications, the diode is used to form a frequency-dependent attenuator, where it is used to create a voltage drop to reduce the amount of power passing through a circuit.
The MM5Z7V5T1G can be used in avalanche breakdown circuits, which are used to protect against overvoltage. This diode can also be used in conjunction with a resistor network to form a voltage-dependent current limiter, which is used in power supplies.
Working Principle
The MM5Z7V5T1G works based on the semiconductor principle of a p-n junction diode. When a voltage is applied to the diode, the p-n junction junction is forward biased, and current flows through the diode. However, if the applied voltage is greater than the reverse breakdown voltage of the diode, the diode will enter a state of reverse breakdown, allowing current to flow in the opposite direction. This current is limited to a certain amount by the reverse breakdown voltage of the diode.
In the case of the MM5Z7V5T1G, the reverse breakdown voltage is low, so the current is limited and can be used to stabilize voltage in voltage regulation circuits, or to dissipate extra power in an overvoltage protection circuit. This behavior of the diode is known as Zener breakdown, and the diode is known as a Zener diode.
In addition to the reversed breakdown voltage of the diode, the MM5Z7V5T1G also has a very high capacitance and is used in high frequency applications due to this characteristic. The diode is also highly temperature resistant, making it suitable for use in extreme conditions.
Conclusion
In conclusion, the MM5Z7V5T1G is a versatile diode with a wide range of applications. It is used in voltage regulation and protection circuits due to its low voltage reverse breakdown voltage, and also in radio frequency applications due to its high capacitance. The working principle of the MM5Z7V5T1G is based on the reversed breakdown of a p-n junction, which limits the current to a certain level, allowing for the control of voltage and the protection of circuits against overvoltage.
The specific data is subject to PDF, and the above content is for reference
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