MMBTH81 Discrete Semiconductor Products |
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Allicdata Part #: | MMBTH81TR-ND |
Manufacturer Part#: |
MMBTH81 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANSISTOR RF PNP SOT-23 |
More Detail: | RF Transistor PNP 20V 50mA 600MHz 225mW Surface Mo... |
DataSheet: | MMBTH81 Datasheet/PDF |
Quantity: | 925 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP |
Voltage - Collector Emitter Breakdown (Max): | 20V |
Frequency - Transition: | 600MHz |
Noise Figure (dB Typ @ f): | -- |
Gain: | -- |
Power - Max: | 225mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 60 @ 5mA, 10V |
Current - Collector (Ic) (Max): | 50mA |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 (TO-236) |
Base Part Number: | MMBTH81 |
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The MMBTH81 is a Bipolar junction transistor (BJT) specifically designed to be used in RF applications. It is a NPN transistor in a very small surface-mount package, making it an easy-to-use component for RF circuit designs.
A Bipolar Junction Transistor (BJT) is a type of transistor that utilizes two p-n junctions to control current and voltage coupling between the base and collector of the component. An NPN transistor designates a type of BJT where the two p-n junctions are connected to create a negative-positive-negative (NPN) arrangement. An NPN transistor’s “base-emitter current” (the number of electrons flowing between the base and the emitter) is controlled by the current between its base and the collector.
The MMBTH81 is an NPN bipolar junction transistor. Its collector-emitter voltage (V-ce) rating is 40 V, and it has a power dissipation of 1.5 Watts (W), suggesting it can support high current operation. The MMBTH81 is also suitable for Class A, B and C amplifiers, making it an ideal choice for RF applications.
The MMBTH81’s working principle is similar to that of any other BJT. The transistor has three terminals: the base, the collector, and the emitter. A voltage applied to the base (the input signal) will determine the amount of current that flows from the collector to the emitter (and out of the NPN transistor). This “amount of current” is called the “gain” of the component.
The MMBTH81 is designed to work with RF frequency signals. The component is designed to be able to “switch” on or off quickly enough to follow a signal as it varies in frequency, usually in the MHz range. This helps the component remain responsive and accurate in responding to changes in the frequency of the signal, allowing it to efficiently and accurately amplify and manipulate the signals it receives.
Due to its small package size, the MMBTH81 offers advantages over other RF transistors, such as improved portability and easier assembly. The component is ideal for portable and compact electronics, where size is a significant design consideration.
The MMBTH81 can be used in a variety of RF applications, such as audio amplifiers, RF amplifiers and signal mixing devices. It is also commonly used to build RF signal amplifiers and oscillators, as it is capable of switching on or off quickly enough to follow signal as it varies in frequency.
The MMBTH81 is an ideal component for RF circuit designs, providing an efficient, reliable, and cost-effective solution for a wide range of applications. With its small size and high performance, the component is an excellent choice for engineers and hobbyists looking for a dependable BJT.
The specific data is subject to PDF, and the above content is for reference
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