MMBT4124-7-F Allicdata Electronics
Allicdata Part #:

MMBT4124-FDITR-ND

Manufacturer Part#:

MMBT4124-7-F

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS NPN 25V 0.2A SMD SOT23-3
More Detail: Bipolar (BJT) Transistor NPN 25V 200mA 300MHz 300m...
DataSheet: MMBT4124-7-F datasheetMMBT4124-7-F Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 25V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 1V
Power - Max: 300mW
Frequency - Transition: 300MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Base Part Number: MMBT4124
Description

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The MMBT4124-7-F is a type of bipolar junction transistor, also known as a BJT. This BJT is a single transistor with a package of SOT-23, and it is designed to offer high-frequency switching and amplification performance. The MMBT4124-7-F can be used in a variety of applications, including audio circuits, radio frequency (RF) circuits, and power amplifier stages.

The MMBT4124-7-F offers several advantages over other bipolar transistors, such as its low noise figure, wide output current range, and excellent linearity in both the input and output stages. Additionally, it has an extremely low saturation voltage, making it suitable for use in saturated and near-saturated operation. The device features a PNP transistor with an active region of −40°C to 150°C, making it suitable for use in a wide range of temperature conditions.

Aside from its high-frequency performance and wide temperature range, the MMBT4124-7-F features a low power dissipation. This is made possible by its high-speed switching time and low collector-emitter saturation voltage. The device has a high switching speed, making it suitable for use in circuitry that requires fast operation. Furthermore, the MMBT4124-7-F has an extremely low collector-emitter saturation voltage, making it suitable for applications that require high voltage operation.

The MMBT4124-7-F works by converting an alternating current (AC) input signal into a direct current (DC) output signal. It achieves this by using a process known as current amplification, which is the conversion of a small input current into a larger output current. The device receives current from an external source, then amplifies it using two transistor sections. The base-emitter junction of the transistor acts as a current control, while the collector-emitter junction acts as an output driver.

The MMBT4124-7-F is commonly used in a variety of applications, including telecommunications, signal processing, and power amplifiers. Additionally, it can be used as a signal processing component in digital equipment, such as digital signal processors (DSPs) and electronic retail systems. It is also used in audio circuits, such as low-power amplifiers and preamplifiers. Lastly, the MMBT4124-7-F can be used in RF circuits, such as radio receivers and transmitters.

In summary, the MMBT4124-7-F is a single bipolar junction transistor with a package of SOT-23. It is designed for high-frequency switching and amplification, and is suitable for a wide range of applications. It has a low noise figure, wide output current range, and has an extremely low saturation voltage. The device works by using a process known as current amplification, which converts a small input current into a larger output current. Lastly, the MMBT4124-7-F is commonly used in a variety of applications, including telecommunications, signal processing, and power amplifiers.

The specific data is subject to PDF, and the above content is for reference

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