MMBT5088 Allicdata Electronics
Allicdata Part #:

MMBT5088TR-ND

Manufacturer Part#:

MMBT5088

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 30V 0.1A SOT-23
More Detail: Bipolar (BJT) Transistor NPN 30V 100mA 50MHz 350mW...
DataSheet: MMBT5088 datasheetMMBT5088 Datasheet/PDF
Quantity: 18000
Stock 18000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100µA, 5V
Power - Max: 350mW
Frequency - Transition: 50MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23
Base Part Number: MMBT5088
Description

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MMBT5088 is a type of bipolar junction transistor, also known as a BJT. This type of transistor has three terminals: an emitter, collector, and base. It is also sometimes referred to as a "three-terminal device", and is used in many electronic applications. MMBT5088 is particularly popular within the electronics industry, due to its low power consumption, high gain, and its ability to control a large amount of current with a small amount of input.

The MMBT5088 is a NPN-type transistor, which means that the majority charge carriers are holes and the minority charge carriers are electrons. The device consists of a collector, an emitter and a base region. The device operates in three regions: the active region, forward-active region, and the saturation region. In the active region, base current controls collector-emitter current without the voltage drop across the collector-emitter. This region is ideal for applications requiring linear gain and controllable current. In the forward-active region, collector-emitter current is controlled by both the base current and the voltage drop across the collector-emitter. This region is suitable for switching applications as well as amplification. Lastly, in the saturation region, collector-emitter current is simply determined by the base current.

MMBT5088 transistors are widely used in various applications, such as amplifier circuits, switching circuits, pulse generation, and for general purpose switching applications. It is also used in the design of audio amplifiers, motor control, power supply circuits, and in integrated circuits. Due to its low power consumption and its ability to control a large amount of current with a small amount of input, it can be used to build various power efficient applications. Its high gain is also useful in various linear and switching applications, such as in current amplifiers and voltage drivers.

The working principle of MMBT5088 transistor is to use the base-emitter junction as a controlled current source. When a voltage is applied to the base of the transistor, a current will flow through the base-emitter junction. This current is then amplified by the collector-emitter junction before being outputted. The base current and collector current are determined by the base voltage and the voltage drop across the collector-emitter. This allows the transistor to be used to control large currents with a small amount of input.

In conclusion, the MMBT5088 is an NPN-type BJT, which is used in many applications in the electronics industry. It is used to control large currents with a small amount of input due to its low power consumption and its high gain. It is also used in amplifier circuits, switching circuits, and pulse generation. Its working principle is to use the base-emitter junction as a current source which is then amplified by the collector-emitter junction. Thanks to its various advantages, it is widely used in various applications.

The specific data is subject to PDF, and the above content is for reference

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