MMBTH10-7 Discrete Semiconductor Products

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The MMBTH10-7 is a high-performance, high-reliability N-type Bipolar Junction Transistor (BJT) that is specifically designed for use in Radio Frequency (RF) applications.

The MMBTH10-7 is a NPN transistor that is capable of providing excellent gain and power performance over a wide frequency range, from 0–500MHz. It is manufactured using the advanced Silicon-Geranium-on-Insulator (SiGe-on-I) process, which offers superior performance over traditional SiGe processes. The MMBTH10-7 is available in a variety of packages, including TO-3, SOT-23, and SOT-223.

The MMBTH10-7’s working principle is based on the saturation of the collector-base junction. The collector current is controlled by the base current, and the current gain of the transistor is determined by the ratio of the collector current to the base current. This ratio is known as the current gain or “beta.” The MMBTH10-7 has a maximum current gain of 800, which is excellent for RF applications. The saturated collector current is a function of the collector-base voltage, which is generally held at a constant value in RF applications.

Furthermore, the MMBTH10-7 has excellent thermal stability. Its packaging options allow for efficient heat management, and its high-reliability construction ensures that its performance remains consistent over time. The transistor’s high frequency response, high gain, and high reliability make it an ideal choice for RF applications.

The MMBTH10-7 transistor is suitable for a wide range of RF applications, such as amplifiers, mixers, oscillators, and amplifiers. It can be used in the design of low-noise amplifiers, high-power amplifiers, and Class E amplifiers. It can also be used in the design of high-power switches, current-controlled oscillators, and radio transmitter circuits. In short, the MMBTH10-7 is a versatile transistor that offers excellent performance in RF applications.

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