MMBT200

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	PNP
Current - Collector (Ic) (Max):	500mA
Voltage - Collector Emitter Breakdown (Max):	45V
Vce Saturation (Max) @ Ib, Ic:	400mV @ 20mA, 200mA
Current - Collector Cutoff (Max):	50nA
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 150mA, 5V
Power - Max:	350mW
Frequency - Transition:	250MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SOT-23-3
Base Part Number:	MMBT200

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<p>MMBT200, or surface-mount NPN epitaxial silicon transistors, are commonly used in a variety of applications. They typically have a maximum power dissipation of 500 mW and a minimum breakdown voltage of 40 V. This makes them well-suited for applications where space is limited and/or efficiency is important. In fact, MMBT200 transistors are often used in low-noise amplifiers, linear and switching power supplies, DC-DC converters, voltage regulators, motor control, and high-speed switching applications.</p><p>The operation of MMBT200 transistors is based on the bipolar junction transistor (BJT) design. This type of transistor consists of three layers of semiconductor material, which are separated by two PN junctions. These layers form an NPN junction, where the N stands for the N-type material, the P stands for the P-type material, and the N is the base junction. The current flowing through the transistor is controlled by varying the voltage applied to the base-collector junction. When a small current is applied to the base junction, a larger current is able to pass through the collector junction, thereby controlling the overall current flowing in the transistor.</p><p>MMBT200 transistors use a single-stage design, meaning that all three layers are formed in a single die of semiconductor material. This design allows for a more compact package and more efficient operation when compared to multi-stage transistors. In addition, this type of single-stage BJT design typically requires less current input from a control signal, allowing it to be used in a wider range of applications.</p><p>MMBT200 transistors are further characterized by their high-frequency and high-temperature operation. Their high-frequency performance is achieved by minimizing the amount of inductance and capacitance that is present in the transistor. This helps to ensure that the transistor is able to quickly switch between on and off states, making them well-suited for high-speed switching. Additionally, MMBT200 transistors are able to withstand high temperatures (up to 150°C) due to their high breakdown voltage. This makes them well-suited for use in harsh environments, such as automotive under-the-hood applications.</p><p>In summary, MMBT200 transistors are a popular choice for a variety of applications due to their cost-efficiency, high-frequency performance, and high-temperature operation. They are typically used in applications where space is limited and/or efficiency is important, such as low-noise amplifiers, linear and switching power supplies, DC-DC converters, voltage regulators, motor control, and high-speed switching. MMBT200 transistors can perform reliably under high temperature and under the application of high frequency current, making them a great choice for applications in harsh environments.</p>

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