Allicdata Part #: | MMBTA55LT3-ND |
Manufacturer Part#: |
MMBTA55LT3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 60V 0.5A SOT-23 |
More Detail: | Bipolar (BJT) Transistor PNP 60V 500mA 50MHz 225mW... |
DataSheet: | MMBTA55LT3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 500mA |
Voltage - Collector Emitter Breakdown (Max): | 60V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 10mA, 100mA |
Current - Collector Cutoff (Max): | 100nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 100mA, 1V |
Power - Max: | 225mW |
Frequency - Transition: | 50MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 (TO-236) |
Base Part Number: | MMBTA55 |
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MMBTA55LT3 is a single transistor of bipolar junction type (BJT) used in various applications. It is a European equivalent of 2N5551.
The MMBTA55LT3 is available in the TO-92 package and features a 3-pin design. It has a collector-emitter voltage of 60 Volts and an emitter-base voltage of 6-7 Volts. It features a maximum current gain (hFe) of 200 at a collector current of 5 mA, a maximum collector current of 600 mA and a maximum power dissipation of 500 mW. The transistor also has a low current gain (hce) of 10 to 20 when the base current is 100 µA.
MMBTA55LT3 is mainly used in oscillators and amplifiers. It is most commonly used as an amplifier for audio signals or as an oscillator for radio frequency applications. It can also be used as a switch for controlling small currents up to around 600 mA. In addition, it can be used as an electronic switch for controlling larger currents up to 10 A. The transistor can also be used as an amplifier for low-frequency signals, such as for working and monitoring audio signals.
The working principle of MMBTA55LT3 transistor is based on the fact that two PN junctions are formed when two pieces of semiconductors are joined together. The direction of current flow in the transistor is mainly controlled by the base. When a current passes via the base and enters the transistor, it pushes more electrons into the collector, creating a larger current through the collector. This is the collector current, known as the amplified current. This amplified current is used to drive various devices as required.
The transistor can be used in various configurations depending on the application. It can be used as a switch or an amplifier in common-emitter configuration. The common-base configuration is mostly used for working on high-frequency signals, while the common-collector configuration is used for amplification and switching purposes. Furthermore, the common-emitter and the push-pull amplifier configuration are used mainly for producing analog signals.
In conclusion, the MMBTA55LT3 is a single transistor of bipolar junction type (BJT) which can be used in various applications as a switch, an amplifier, and an oscillator for radio frequency applications. It mainly works on the principle of PN junction and can be used in various configurations depending on the application.
The specific data is subject to PDF, and the above content is for reference
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