MMBZ5252BS-7-F

Series:	--
Packaging:	Tape & Reel (TR)
Lead Free Status / RoHS Status:	--
Part Status:	Active
Moisture Sensitivity Level (MSL):	--
Configuration:	2 Independent
Voltage - Zener (Nom) (Vz):	24V
Tolerance:	±5%
Power - Max:	200mW
Impedance (Max) (Zzt):	33 Ohms
Current - Reverse Leakage @ Vr:	100nA @ 18V
Voltage - Forward (Vf) (Max) @ If:	900mV @ 10mA
Operating Temperature:	-65°C ~ 150°C
Mounting Type:	Surface Mount
Package / Case:	6-TSSOP, SC-88, SOT-363
Supplier Device Package:	SOT-363
Base Part Number:	MMBZ5252BS

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MMBZ5252BS-7-F Application Field and Working Principle Diodes, along with their different variants, such as Zener diode and Zener arrays, are among the most widely used semiconductor devices in the world. The MMBZ5252BS-7-F is an excellent example of this particular type of technology. Developed by STMicroelectronics, the device was created to fill a need for efficient conversion of energy, as well as more reliable switching and control of power in a variety of applications.The MMBZ5252BS-7-F is a Zener diode array that features two silicon chips with each containing 17 0.1 W (1/10 W) voltage regulator diodes. The array is designed to supply an optimal amount of current throughout the application field and is tolerant of high input voltages up to the maximum rating of 200 V. This allows the device to be used in a wider range of applications and to provide improved performance in critical areas of operation.The operating temperature range of the MMBZ5252BS-7-F is- 65°C to +175°C, and its junction capacitance is 25 pF. Its maximum reverse leakage current is 0.1 μA, and its total reverse current is 50 μA. The device provides a breakdown voltage of 6.2 V and has a maximum operating voltage of 200 V.The MMBZ5252BS-7-F is well-suited for applications requiring a reliable, efficient Zener diode array, including in battery-powered systems, computer memories, and numerous industrial electronics. Its two-chip design makes it a great choice for printed circuit boards, as it is able to mount two chips in the same footprint. Additionally, the device provides an excellent DC power conversion for switching power supplies, allowing users to benefit from improved efficiency and greater power control.The MMBZ5252BS-7-F is constructed using a Silicon NPN transistor and a Zener diode array. This two-component structure allows the device to efficiently convert energy and create dynamic switching for power control and signal transmission. As a result, the device can be used to create a wide array of signal control and voltage regulation applications in various application fields.The array is composed of a series of 17 diodes arranged in a rectangular pattern. This configuration allows the diodes to operate independently and be individually adjusted, which increases device efficiency and allows the user to precisely control operating conditions. This is an important feature of the MMBZ5252BS-7-F, as the constant monitoring and dynamic regulation of the device’s output can ensure that power levels and stability remain constant.A variety of elements, such as temperature, voltage, and current, influence the performance of the MMBZ5252BS-7-F. Since the device is designed to monitor and control these factors, its performance is highly consistent and depends on the material used in the device\'s construction. Therefore, it is important to choose high-grade products that offer a high degree of reliability, safety, and performance.In conclusion, the MMBZ5252BS-7-F is an excellent example of a Zener diode array. Its two-chip design allows it to operate in more applications than single-chip devices, while its component structure ensures efficient power conversion and reliable switching control. Additionally, the device\'s independent diodes can be individually adjusted, which increases efficiency and reliability for all kinds of applications. Because of these qualities, the MMBZ5252BS-7-F is a popular choice among designers, engineers, and users in a variety of application fields.

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