MMBZ5252BTS-7-F Allicdata Electronics
Allicdata Part #:

MMBZ5252BTS-7-F-ND

Manufacturer Part#:

MMBZ5252BTS-7-F

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: DIODE ZENER ARRAY 24V SOT363
More Detail: Zener Diode Array 3 Independent 24V 200mW ±5% SOT-...
DataSheet: MMBZ5252BTS-7-F datasheetMMBZ5252BTS-7-F Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Configuration: 3 Independent
Voltage - Zener (Nom) (Vz): 24V
Tolerance: ±5%
Power - Max: 200mW
Impedance (Max) (Zzt): 33 Ohms
Current - Reverse Leakage @ Vr: 100nA @ 18V
Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363
Description

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The MMBZ5252BTS-7-F is a Zener diode array designed to protect against voltage transients that can impact sensitive electronic systems. The diode array is composed of two series-connected Zener diodes. It is capable of withstanding reverse voltages up to 600 V, while providing an off-state current of 0.25 mA and a breakdown voltage of 6.2 V. The device is a low-cost, general-purpose solution for a wide variety of applications that require protection from transient voltage events.

The MMBZ5252BTS-7-F is typically used in circuits where transient voltages can potentially cause damage to sensitive electronic components due to large electrostatic discharges (ESDs) or other incident voltages. The diode array provides an efficient means of dissipating and reducing the voltage of the incident, in order to prevent the components from being damaged.

The MMBZ5252BTS-7-F diode array operates in two main stages, depending on the amount of incident voltage: avalanche breakdown and low-voltage ESD protection. In the avalanche breakdown stage, when the voltage applied to the device is greater than the breakdown voltage, the diode begins to conduct current and the voltage is dissipated. This helps to protect components from overvoltage events caused by ESDs, as the diode array dissipates the extra energy and reduces the voltage of the incident.

In the second stage, when the incident voltage is lower than the breakdown voltage, the diode array begins to provide low-voltage ESD protection. This reduces the voltage of the incident and prevents any further damage from being done to the components. The device is able to dissipate up to 1.5A of peak current, making it suitable for ESD protection of sensitive electronic components.

The MMBZ5252BTS-7-F diode array is a reliable and cost-effective solution for many applications where voltage transients may cause damage to sensitive electronic components. It provides an efficient way to dissipate and reduce the excess energy of the incident while providing low-voltage ESD protection. Its small size and low-cost make it an ideal solution for many different types of applications.

The specific data is subject to PDF, and the above content is for reference

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