| Allicdata Part #: | 1086-7083-ND |
| Manufacturer Part#: |
MP6KE27AE3 |
| Price: | $ 0.00 |
| Product Category: | Circuit Protection |
| Manufacturer: | Microsemi Corporation |
| Short Description: | TVS DIODE 23.1V 37.5V T-18 |
| More Detail: | N/A |
| DataSheet: | MP6KE27AE3 Datasheet/PDF |
| Quantity: | 1000 |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
| 1 +: | 0.00000 |
| Voltage - Clamping (Max) @ Ipp: | 37.5V |
| Supplier Device Package: | T-18 |
| Package / Case: | T-18, Axial |
| Mounting Type: | Through Hole |
| Operating Temperature: | -65°C ~ 150°C (TJ) |
| Capacitance @ Frequency: | -- |
| Applications: | General Purpose |
| Power Line Protection: | No |
| Power - Peak Pulse: | 600W |
| Current - Peak Pulse (10/1000µs): | 16A |
| Series: | Military, MIL-PRF-19500 |
| Voltage - Breakdown (Min): | 25.7V |
| Voltage - Reverse Standoff (Typ): | 23.1V |
| Unidirectional Channels: | 1 |
| Type: | Zener |
| Moisture Sensitivity Level (MSL): | -- |
| Part Status: | Active |
| Lead Free Status / RoHS Status: | -- |
| Packaging: | Bulk |
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TVS diodes are multilayer, transient-voltage suppression devices specifically designed to protect sensitive electronic equipment from voltage spikes. These transient-voltage suppression devices are capable of withstanding surges up to several hundred volts while limiting the voltage across the protected components to safe levels. The MP6KE27AE3 transient-voltage suppression diode is a unidirectional diode with a low breakdown voltage and low clamping voltage. It is designed to prevent destructive high-energy transients from piercing through sensitive electronic components, protecting them from potential damage due to flashover or shorts in the system.
The MP6KE27AE3 is available in an SOD-323 package with a maximum peak pulse power rating of 600 W (8x 20 μs). This device is widely used in circuit protection applications, such as ESD protection, bus line protection, circuit protection relays, as well as automotive and industrial sectors.
The MP6KE27AE3 is part of the ESD protection diode series designed for protection against transient overvoltage discharges and line transients. When the line voltage exceeds the clamping voltage, the devices conduct and form a low-impedance shunt to ground. This forms a relatively low-resistance path to ground during surges, diverting the current away from sensitive components and limiting the voltage across the protected components to safe levels.
The MP6KE27AE3 features an avalanche-capable design, allowing for higher peak current flow and minimum leakage current throughout the life of the diode. These diodes also possess superior switching capabilities and high temperature stability. This device is designed for high-speed switching applications, such as AC/DC conversion systems, motor drivers, and voltage regulators. The MP6KE27AE3 is also suitable for mobile, consumer, and automotive applications.
The operating principle of the MP6KE27AE3 is based on the principle of avalanche breakdown. Avalanche breakdown occurs when the electric field across a semiconductor junction exceeds a critical value, resulting in a steep exponential increase in current through the junction. This leads to the formation of a conducting channel, allowing current to flow in an exponential manner and diverting it away from sensitive components, thus protecting them from potential damage.
In conclusion, the MP6KE27AE3 is a unidirectional transient-voltage suppression diode with low breakdown voltage and low clamping voltage that is designed to protect sensitive electronic components from destructive high-energy transients. This device is ideal for circuit protection in a variety of applications, including ESD protection, bus line protection, circuit protection relays, AC/DC conversion systems, motor drivers, and voltage regulators. Its operation is based on the principle of avalanche breakdown, allowing for higher peak current flow and minimum leakage current throughout the diode\'s lifetime.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| MP6KE33A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 28.2V 45.7V T-1... |
| MP6KE36A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 30.8V 49.9V T-1... |
| MP6KE27A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 23.1V 37.5V T-1... |
| MP6KE9.1CAE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 7.78V 13.4V T-1... |
| MP6KE180A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 154V 246V T-18 |
| MP6KE18A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 15.3V 25.2V T-1... |
| MP6K31TCR | ROHM Semicon... | 0.0 $ | 1000 | MOSFET 2N-CH 60V 2A MPT6M... |
| MP6KE7.5CA | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 6.4V 11.3V T-18 |
| MP6KE150CA | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 128V 207V T-18 |
| MP6KE18AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 15.3V 25.2V T-1... |
| MP6K14TCR | ROHM Semicon... | 0.0 $ | 1000 | MOSFET 2N-CH 30V 8A MPT6M... |
| MP6KE68AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 58.1V 92V T-18 |
| MP6KE75A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 64.1V 103V T-18 |
| MP6KE24AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 20.5V 33.2V T-1... |
| MP6KE47AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 40.2V 64.8V T-1... |
| MP6KE51A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 43.6V 70.1V T-1... |
| MP6KE110CAE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 94V 152V T-18 |
| MP6KE13A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 11.1V 18.2V T-1... |
| MP6KE75CAE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 64.1V 103V T-18 |
| MP6KE33CA | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 28.2V 45.7V T-1... |
| MP6KE20AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 17.1V 27.7V T-1... |
| MP6KE22AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 18.8V 30.6V T-1... |
| MP6KE91CA | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 77.8V 125V T-18 |
| MP6KE130CA | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 111V 179V T-18 |
| MP6KE15CA | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 12.8V 21.2V T-1... |
| MP6KE10AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 8.55V 14.5V T-1... |
| MP6K31TR | ROHM Semicon... | 0.0 $ | 1000 | MOSFET 2N-CH 60V 2A MPT6M... |
| MP6KE16AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 13.6V 22.5V T-1... |
| MP6KE82AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 70.1V 113V T-18 |
| MP6KE180CA | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 154V 246V T-18 |
| MP6KE200A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 171V 274V T-18 |
| MP6KE43A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 36.8V 59.3V T-1... |
| MP6KE110AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 94V 152V T-18 |
| MP6KE200CAE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 171V 274V T-18 |
| MP6KE82A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 70.1V 113V T-18 |
| MP6KE47CA | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 40.2V 64.8V T-1... |
| MP6KE51CA | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 43.6V 70.1V T-1... |
| MP6KE82CAE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 70.1V 113V T-18 |
| MP6KE150CAE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 128V 207V T-18 |
| MP6KE20A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 17.1V 27.7V T-1... |
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MP6KE27AE3 Datasheet/PDF