Allicdata Part #: | MPF102_D27Z-ND |
Manufacturer Part#: |
MPF102_D27Z |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | JFET N-CH 25V 20MA TO92 |
More Detail: | RF Mosfet N-Channel JFET TO-92-3 |
DataSheet: | MPF102_D27Z Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | N-Channel JFET |
Frequency: | -- |
Gain: | -- |
Current Rating: | 20mA |
Noise Figure: | -- |
Power - Output: | -- |
Voltage - Rated: | 25V |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | MPF102 |
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The MPF102_D27Z is a type of Field Effect Transistor (FET) that is used in radio frequency (RF) applications. It has the advantage of offering high frequency performance, along with low power consumption. Typically, it comes in a two-pin or three-pin SOT23 package and is used in amplifier, detector and switching circuits at radio frequencies.
The working principle of FETs relies on the presence of a drain-source voltage and a gate voltage. When the gate voltage increases, the current flowing between the drain and source also increases, resulting in the FET’s transduction properties. Additionally, FETs can be used as switches, providing a high input impedance, low output impedance, and low noise.
When it comes to the MPF102_D27Z, it is a general-purpose N-channel JFET. It is able to provide low-noise and high-gain performance, along with excellent stability and low distortion. Furthermore, this device has low RDS(on) resistance, which allows it to supply larger currents. These characteristics make it invaluable for circuit design professionals for many RF applications, such as amplifiers, detectors, switches, as well as signal processing.
The MPF102_D27Z features a maximum drain-source voltage of 100 volts and a maximum gate-source voltage of ±18 volts. It also has a drain-source current of 250 mA and a high voltage gain at 2.2 MHZ. In terms of performance, the device has a low noise figure of 12 dB and excellent linearity.
Moreover, the MPF102_D27Z also has an optimized frequency range of 1 to 500 MHz which makes it useful for a wide range of applications. It has a fast switching time of 30ns and low harmonic distortion, making it a reliable and powerful choice for RF applications.
In addition, the MPF102_D27Z is a reliable device that is available in various sizes and packages. This makes it easy to use and it can be used in a variety of circuits. It also has a high yield rate and good reliability, making it reliable for use in continuous operation.
Overall, the MPF102_D27Z is a powerful FET which provides excellent RF performance in a wide range of applications. Its high-frequency performance, low noise, and low power consumption make it an ideal choice for radio frequency applications. Combined with its reliability and packaging flexibility, the MPF102_D27Z is an essential addition to any circuit design professional’s toolkit.
The specific data is subject to PDF, and the above content is for reference
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