MPF102G

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The MPF102G is a field-effect transistor primarily used for radio frequency (RF) applications. It is a through-hole N-channel MOSFET transistor with a voltage-controlled gate and low thresholds, making it suitable for a wide range of projects and different types of operation. The MPF102G is capable of both normal and fast switching operation and is therefore a useful component in electronics for making rapid on/off switching in a circuit, helping regulate the flow of current.

The MPF102G\'s main purpose is to serve as a switch, which it does through an arrangement of n-channel junction, source and drain electrodes, and protection against static electricity. This type of field-effect transistor, also known as an enhancement or depletion-mode MOSFET, is designed to control current with a voltage-controlled gate, which is a capability that demonstrates the FET\'s use as a switch. The gate electrode, which is connected to an external voltage source and controls current flow, is the only part of the MPF102G with an exposed metal lead to the outside world.

The MPF102G\'s versatile design and extensive application range make it a highly sought-after component in RF applications. The device is capable of providing high linearity and high efficiency performance in both audio and RF applications, allowing for reliable wide-band operation. Additionally, thanks to its low-noise operation and low-voltage threshold, this type of FET is suitable for many medium power and high linearity amplification or switching applications, including impedance matching of RF systems and oscillator circuits.

The wideband performance of the MPF102G is made possible by the use of a dual gate structure, which combines with extremely low on-resistance in order to achieve maximum transition speed and low insertion loss. Furthermore, the dual gate structure also reduces the production of disconnected channels and ensures better temperature stability, resulting in improved RF performance. The dual gate structure of the MPF102G also serves as a protection against static electricity, as the composite gate is able to resist changes caused by static electricity.

In short, the MPF102G is a versatile and multi-purpose MOSFET transistor, suitable for numerous radio frequency applications. From impedance matching and oscillator circuits to wideband operation, the MPF102G is a reliable, low-voltage, low-noise FET and a highly sought-after component in RF applications.

The specific data is subject to PDF, and the above content is for reference