Allicdata Part #: | MPS750GOS-ND |
Manufacturer Part#: |
MPS750G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 40V 2A TO92 |
More Detail: | Bipolar (BJT) Transistor PNP 40V 2A 75MHz 625mW Th... |
DataSheet: | MPS750G Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 2A |
Voltage - Collector Emitter Breakdown (Max): | 40V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 200mA, 2A |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 75 @ 1A, 2V |
Power - Max: | 625mW |
Frequency - Transition: | 75MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | MPS750 |
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MPS750G is a kind of single PNP bipolar junction transistor (BJT). It is suitable for medium power linear and switching applications at high frequencies. This component was designed for use in a variety of audio, power, and general purpose circuits, and has many features that make it especially useful in most applications.
The MPS750G has a maximum collector current rating of 750mA and a maximum power dissipation rating of 625mW. The maximum voltage ratings are up to 50 volts. It also has a high frequency response, making it useful in high frequency applications such as car audio amplifiers and high speed switching circuits. It also has a low Vce(saturation) rating of 0.2V, which makes it suitable for operating in low voltage, high current applications.
The MPS750G has a variety of application fields. It can be used in linear audio amplifiers, high voltage switching circuits, industrial power control, and high frequency switching applications. It can also be used in circuits where a low Vce(saturation) is desired, such as motor control applications. In addition, it can be used as a voltage regulator or protection element for battery-powered equipment.
The working principle of MPS750G is similar to that of other BJTs. It works by allowing current to flow through its base-emitter junction when there is a small voltage applied. This induces the transistor to allow current to flow through its collector-emitter junction and output power. By surgically adjusting its base current, the transistor can be used to control the output current or voltage.
MPS750G combines several features that makes it very useful in a variety of applications. It has a wide operating temperature range, making it suitable for use in industrial applications. It also has a lower Vce(saturation) rating for better low-voltage performance. It also offers reduced gate capacitance for improved high-frequency performance. All these features combine to make MPS750G a great choice for most transistor-based applications.
The specific data is subject to PDF, and the above content is for reference
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