Allicdata Part #: | MPS751RLRAOSCT-ND |
Manufacturer Part#: |
MPS751RLRA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 60V 2A TO92 |
More Detail: | Bipolar (BJT) Transistor PNP 60V 2A 75MHz 625mW Th... |
DataSheet: | MPS751RLRA Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Cut Tape (CT) |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 2A |
Voltage - Collector Emitter Breakdown (Max): | 60V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 200mA, 2A |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 75 @ 1A, 2V |
Power - Max: | 625mW |
Frequency - Transition: | 75MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | MPS751 |
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MPS751RLRA is a single type bipolar junction transistor (BJT) used for multiple purposes that offer a larger current carrying capacity than a regular BJT. It is an NPN type BJT with a collector-base voltage of 80V and a collector-base current of 400mA. The device can operate in the temperature range from −55 °C to 150 °C.
The MPS751RLRA has a higher current carrying capacity than regular BJTs because of the large area of its collector-base junction. It offers high current gain, high switching speed and low on-resistance. This makes it suitable for power ampl application, high frequency switching and high voltage switching.
The device is designed to be used in a variety of applications like power amplifiers, high frequency switching, high voltage switching, driving power MOSFETs, driving IGBTs and Power switching circuits. The MPS751RLRA device is used in RF, audio and controlling systems. Some of its applications include, audio power amplifiers, switching power amplifiers, switching supplies, lighting control and telecommunication applications.
The working principle of MPS751RLRA is very simple, it acts as a switch to control the flow of current and voltage. It carries current from the collector to the emitter when a voltage is applied to the base. This process is known as current amplification as the base current is amplified to the collector current.
The MPS751RLRA device operates on a higher switching speed and low Collector–Base Limit junction capacitance, due to its large area of the collector-base junction. This results in higher current gain and element switching speed.
The device is also capable of driving power MOSFET’s and IGBT’s. It offers high input impedance and low saturation voltage due to its NPN design. The device also provides low noise, excellent thermal stability, good stability and ruggedness as it is a monolithic BJT device.
In summary, MPS751RLRA is a single type bipolar junction transistor (BJT) used for multiple purposes. It has a higher current carrying capacity than regular BJTs and offers high current gain, high switching speed and low on-resistance, making it suitable for power amplifier application, high frequency switching and high voltage switching. The working principle of MPS751RLRA is quite simple, it acts as a switch to control the flow of current and voltage from the collector to the emitter. It offers low noise, excellent thermal stability and good stability as a monolithic BJT device.
The specific data is subject to PDF, and the above content is for reference
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