MPS751ZL1G

Series:	--
Packaging:	Tape & Box (TB)
Part Status:	Obsolete
Transistor Type:	PNP
Current - Collector (Ic) (Max):	2A
Voltage - Collector Emitter Breakdown (Max):	60V
Vce Saturation (Max) @ Ib, Ic:	500mV @ 200mA, 2A
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	75 @ 1A, 2V
Power - Max:	625mW
Frequency - Transition:	75MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package:	TO-92-3
Base Part Number:	MPS751

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The MPS751ZL1G transistor is an NPN epitaxial silicon transistor that is typically used for small-signal switching and amplification. It is classed as a single Bipolar Junction Transistor (BJT) and is ideal for low-noise applications, current gain up to 500, and voltage gain up to 200. The device has a common base configuration, meaning that the collector and emitter leads are interchangeable.

Understanding how a Bipolar Junction Transistor (BJT) works is central for comprehending the function of the MPS751ZL1G. A BJT is an active semiconductor device consisting of three layers of dopedsilicon. The first layer is the emitter, acting as the source, the second is the base, acting as the control element and the third is the collector, representing the sink. In an NPN BJT, majority carriers are electrons so the conventional flow of current is from the collector to the emitter.

The principle of operation of the transistor is based on the movement of charge. An input current at the base region controls the current flow between the collector and emitter. By controlling the current flow between the base and emitter, more current is able to flow between the collector and emitter. This action is categorised as current amplification. In the MPS751ZL1G, the current gain is typically equal to 500. As the transistor is driven into saturation, the voltage gain is roughly equal to 200.

The MPS751ZL1G is ideal for analog and digital switching applications due to its wide supply voltage range, high operating temperature range and high gain. This device is relatively fast, reaching maximum current gain within a few microseconds at low rates of change. This makes it suitable for direct interfacing with logic-level circuits.

The MPS751ZL1G is versatile covering applications in the automotive, computing, medical and industrial markets. The device is able to perform many different roles like driving low side or high side loads, providing variable current gain, operating as an amplifier or oscillator, or providing waveform shaping. The design of the device also allows for quick circuit performance matching, as well as quick assembly and testing times.

The MPS751ZL1G is an excellent choice when a robust but cheap solution is required. It is able to take a lot of punishment and is often used in automotive and industrial applications due to its wide supply voltage and operating temperature ranges. The MPS751ZL1G is reliable, cost-effective, and provides reliable performance in switching and amplifying applications.

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