MPS750RLRAG Allicdata Electronics
Allicdata Part #:

MPS750RLRAG-ND

Manufacturer Part#:

MPS750RLRAG

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 40V 2A TO-92
More Detail: Bipolar (BJT) Transistor PNP 40V 2A 75MHz 625mW Th...
DataSheet: MPS750RLRAG datasheetMPS750RLRAG Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: PNP
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 1A, 2V
Power - Max: 625mW
Frequency - Transition: 75MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
Base Part Number: MPS750
Description

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The MPS750RLRAG is a type of single bipolar junction transistor (BJT). It is a low power and low voltage device, mainly used in consumer electronics such as computers, smartphones and tablets for a variety of applications. This transistor offers excellent performance and low thermal resistance in a small 2 pin package.

The common base application field of the MPS750RLRAG is a switch and amplifier where it is used to amplify a signal. In this application, it is the amplifier stage of the transistor that makes it the preferred choice for use in these various circuits. As a switch, the MPS750RLRAG allows electric current to flow through it in an on/off state. This helps to reduce power consumption when the switch is off, resulting in better energy efficiency. Additionally, the transistor is used in logic gates and as an oscillator.

The working principle of the MPS750RLRAG is based on the same principles used by all BJTs. The source of the current is the emitter and the device is said to be “forward biased” when current is flowing from the emitter to the collector. This current is then amplified by the base-collector junction and the output is taken from the collector. The transistor switch is on when a voltage greater than the base-emitter junction voltage (VBE) is applied to the base terminal. Conversely, the switch is off when a voltage lower than the VBE is applied to the base terminal.

In the MPS750RLRAG transistor, the voltage amplification is high with a current gain of 20. The device also features an intrinsic power rating of 0.75 watts. Moreover, the collector-base breakdown voltage is 40 volts and the collector-emitter saturation voltage is 0.1 volts. The built-in thermal resistance ensures that the device does not overheat even when operating for extended periods of time.

The MPS750RLRAG transistor is a low-power and low-voltage device that offers excellent performance and low thermal resistance. It is used in a variety of applications such as those in logic gates and oscillators as well as amplifiers and switches. It is a great choice for circuits where power consumption and efficiency are important. In addition, its high voltage amplification, current gain, and thermal resistance make it an ideal choice for use in consumer electronics.

The specific data is subject to PDF, and the above content is for reference

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