Allicdata Part #: | MPS8099GOS-ND |
Manufacturer Part#: |
MPS8099G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 80V 0.5A TO-92 |
More Detail: | Bipolar (BJT) Transistor NPN 80V 500mA 150MHz 625m... |
DataSheet: | MPS8099G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 500mA |
Voltage - Collector Emitter Breakdown (Max): | 80V |
Vce Saturation (Max) @ Ib, Ic: | 400mV @ 5mA, 100mA |
Current - Collector Cutoff (Max): | 100nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 1mA, 5V |
Power - Max: | 625mW |
Frequency - Transition: | 150MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | MPS8099 |
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MPS8099G Transistors are a type of bipolar junction transistors (BJT) available for single discrete applications. They are manufactured by a leading semiconductor technology company, and offer superior performance and reliability in a wide range of uses.
MPS8099G transistors are technically categorized as NPN devices, with a maximum collector current of 800 mA. They have good transient and thermal characteristics, and are capable of withstanding temperatures up to 150°C. Their other specifications include a minimum operating voltage of 5V, an operating temperature range of -40°C to 150°C, and a maximum power dissipation of 0.5W.
MPS8099G transistors are designed for a variety of applications, including high-frequency amplifiers, current sources, level detectors and analog switches. The device is constructed of three layers of semiconductor material, typically silicon, which are arranged to form a transistor structure. This structure forms a three-terminal device, with the base, collector and emitter terminals.
In operation, MPS8099G transistors rely on a basic working principle known as the ‘common-base’ operating configuration. This configuration relies on a direct connection between the base and emitter terminals, which acts to provide current regulation throughout the device. This current regulation is then used to control the collector current, which is then used to produce the desired output.
As a result, MPS8099G transistors can provide an efficient method of current amplification and output control, which makes them well suited for use in a wide range of applications. The wide operating temperature range and powerful dissipation capabilities make them suitable for use in high-temperature environments, such as those found in the automotive and aerospace industries.
In addition, MPS8099G transistors can also be used for low-noise applications, thanks to their high gain-bandwidth product, as well as their wide dynamic range. This makes them well suited for use as amplifiers in audio, consumer audio/video and communication systems.
MPS8099G transistors can be purchased in through-hole packages, or in surface mount packages. They are usually mounted on a printed circuit board, and offer a range of other features, such as surge and ESD protection, over-temperature and overload protection, and logic-level input control.
MPS8099G transistors are a highly reliable and versatile single-discrete device, and offer excellent performance and reliability in a wide range of applications. Their high-frequency operation and wide dynamic range make them suitable for many sensitive signal processing tasks, while their robust packaging and rugged design ensure maximum reliability and long-term operation.
The specific data is subject to PDF, and the above content is for reference
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