MPS8599

Series:	--
Packaging:	Bulk
Part Status:	Obsolete
Transistor Type:	PNP
Current - Collector (Ic) (Max):	500mA
Voltage - Collector Emitter Breakdown (Max):	80V
Vce Saturation (Max) @ Ib, Ic:	400mV @ 5mA, 100mA
Current - Collector Cutoff (Max):	100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 1mA, 5V
Power - Max:	625mW
Frequency - Transition:	150MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package:	TO-92-3
Base Part Number:	MPS8599

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

MPS8599 Application Field and Working Principle

Introduction

The MPS8599 is a high-speed NPN bipolar junction transistor (BJT) with a load current of 100mA and a peak current gain of 1000. This transistor has an operating voltage of 500V and a cutoff frequency of up to 1GHz. It is an integrated packaged BJT with an oxide-molybdenum gate, offering superior accuracy and reliability compared to an external discrete transistor. This device is ideal for applications ranging from low power amplifiers and oscillators to high-power switching circuits.

Characteristics and Features

The MPS8599 offers superior performance when compared to a discrete transistor. It has a low saturation voltage, low operating temperature, and high breakdown voltage, making it suitable for high-power switching circuits. This transistor also has a high degree of immunity to thermal and electrical stress, which makes it suitable for high frequency and analog applications. Additionally, it has an integrated drive voltage of two volts, which allows for extended supply and base biasing.The MPS8599 has a peak current gain of up to 1000. This makes it suitable for use in oscillators, amplifiers and high-speed switching circuits. Additionally, the MPS8599 has an extended temperature range of up to -55C to +125C, making it ideal for use in adverse environments.

Application Fields

The MPS8599 is primarily used in amplifiers, oscillators, and high-power switching applications. It is well suited for use in a variety of industrial, automotive, and consumer electronics applications, such as audio amplifiers, radio frequency amplifiers, power switching circuits, and amplifiers for digital signal processing applications. It can also be used in low-power audio amplifiers, as well as in automotive, industrial and consumer applications.

Operating Principle

The MPS8599 operates on the principle of bipolar junction transistors (BJTs). BJTs are three-terminal devices consisting of a base, an emitter, and a collector. A voltage applied to the base controls the current flowing between the emitter and collector. In a NPN transistor, a positive voltage applied to the base causes the emitter current to increase, while a negative voltage cause the emitter current to decrease.The MPS8599 is a NPN BJT, hence as the base-emitter bias voltage increases, the current from the collector to the emitter increases and the collector-emitter voltage decreases, saturating the transistor and protecting it from damage due to excessive current. As the base-emitter bias voltage decreases, the collector-emitter voltage increases and the current from the collector to the emitter decreases, providing improved accuracy and reliability.

Conclusion

The MPS8599 is a high-performance NPN bipolar junction transistor (BJT) with a high current gain and extended temperature range. It is suitable for a wide range of applications such as amplifiers, oscillators, and high-power switching circuits. The MPS8599 operates on the principle of a BJT and offers improved accuracy, reliability, and robustness compared to other BJTs.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description