MPS8099RLRMG

Series:	--
Packaging:	Tape & Box (TB)
Part Status:	Obsolete
Transistor Type:	NPN
Current - Collector (Ic) (Max):	500mA
Voltage - Collector Emitter Breakdown (Max):	80V
Vce Saturation (Max) @ Ib, Ic:	400mV @ 5mA, 100mA
Current - Collector Cutoff (Max):	100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 1mA, 5V
Power - Max:	625mW
Frequency - Transition:	150MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package:	TO-92-3
Base Part Number:	MPS8099

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<p>The MPS8099RLRMG, classified under transistors - bipolar (BJT) - singles, is an impressive device with a wide range of applications ranging from power amplifier designs and converters to transistor-based amplifiers and radio frequency (RF) applications. The device is composed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and a bipolar junction transistor (BJT), hence the name.</p><p>The MPS8099RLRMG offers excellent performance with its low collector-emitter saturation voltage of 0.6 V and high collector current of 230 mA. It is also highly reliable with a minimum guaranteed total power dissipation of 100 mW and a minimum guaranteed safe operating area of 1 A/V. Additionally, the device is extremely beneficial in special applications involving high current where a high-current low-gain BJT is needed because it features a low noise figure, making it ideal for applications with sensitive audio signals.</p><p>What makes the MPS8099RLRMG so versatile is its ability to operate in multiple configurations such as common emitter, common collector (emitter follower), and common base configurations. In the common emitter configuration, the device amplifies the applied input signal and drives it to the power stage output. In a common collector configuration, it behaves like a voltage buffer, providing complete rejection of the load impedance and allowing the device to maintain its gain stability. The common base configuration, on the other hand, gives the device the ability to drive capacitive loads directly.</p><p>The main working principle behind the MPS8099RLRMG’s performance is its MOSFET/BJT complementary structure. The MOSFET side, acting as the input stage, has a very high input impedance and low input current, allowing it to handle signals with higher frequencies. The high current gain of the BJT side ensures that the output current level is maintained even at high frequency signals while the internally compensated inputs minimize the distortion generated.</p><p>The MPS8099RLRMG is typically used in amplifier designs, voltage regulators, and RF amplifiers. It is particularly suited for RF amplifiers and transmitters due to its ability to efficiently handle signals at higher frequencies. Additionally, it can also be used to build oscillators, switches, level converters, and voltage multipliers.</p><p>As one of the most reliable and versatile devices in transistor technology, the MPS8099RLRMG is an essential component for a wide range of applications. Its combination of performance, low power consumption, and ease of use make it an ideal solution for applications requiring a reliable and efficient device.</p>

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