MPS8599RLRAG

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	PNP
Current - Collector (Ic) (Max):	500mA
Voltage - Collector Emitter Breakdown (Max):	80V
Vce Saturation (Max) @ Ib, Ic:	400mV @ 5mA, 100mA
Current - Collector Cutoff (Max):	100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 1mA, 5V
Power - Max:	625mW
Frequency - Transition:	150MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package:	TO-92-3
Base Part Number:	MPS8599

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Introduction

The MPS8599RLRAG is a high performance, low power, low cost Bipolar Junction Transistor (BJT). It is a single BJT and is used in a wide variety of applications ranging from consumer electronics and communication devices to automotive and industrial equipment. This transistor uses bipolar technology in order to minimize power loss and minimize the heat generated during operation. It has a high voltage rating of 40 V and a high current rating of 1 A which make it an ideal choice for many applications.

Application Fields

The MPS8599RLRAG is typically used in a wide range of applications where low power and high performance is desired. It is often used in power supplies, switching power amplifiers and motor controllers. It is widely used in consumer electronics such as home theater receivers, high-fidelity audio amplifiers, satellite receivers and personal computers. It is also used in automotive applications such as powertrain systems, fuel injection systems and engine control modules. In industrial applications, the transistor is used in motor drives, medical devices, and industrial automation systems.

Working Principle

The MPS8599RLRAG Bipolar Junction Transistor (BJT) is a three terminal semiconductor device that is used in both switching and amplification processes. It consists of two p-type layers sandwiched between an n-type layer. The base-emitter junction is forward-biased, which allows for current to flow from the emitter to the base when a current is applied at the base. The collector-emitter junction is reverse-biased which blocks current from flowing from the collector to the emitter. This allows for the transistor to be used as a switch and for amplification of current.When a current is applied to the base of the transistor a small fraction of the current is able to flow from the base to the emitter. It is this base current that is amplified by the transistor. The amount of current that is amplified is determined by the current gain of the transistor, measured by the current gain beta (β). The higher the current gain, the higher the amount of current that will be amplified.

Advantages and Disadvantages

The MPS8599RLRAG offers a number of advantages over other BJTs. It is able to operate at high temperature and high frequency, making it well suited for use in harsh environments. It is also able to handle high voltages, perfect for use in automotive and industrial applications. Additionally, it is low cost and has low power dissipation.Despite these advantages, there are some drawbacks to the MPS8599RLRAG. It is not able to handle high currents and thus is not appropriate for power amplifier applications. Additionally, its high frequency performance is not as good as some other BJTs.

Conclusion

The MPS8599RLRAG is a high performance, low cost, low power, Bipolar Junction Transistor (BJT) that is suitable for use in a wide variety of applications. It is ideal for use in power supplies, switching power amplifiers and motor controllers. It is also well suited for use in consumer electronics, automotive, and industrial applications. The MPS8599RLRAG also has some drawbacks, such as its lack of capability to handle high currents and its inability to provide good high frequency performance.

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