MRF085HR3

Series:	--
Part Status:	Active
Transistor Type:	LDMOS (Dual)
Frequency:	1.8MHz ~ 1.215GHz
Gain:	25.6dB
Voltage - Test:	50V
Current Rating:	2µA
Noise Figure:	--
Current - Test:	100mA
Power - Output:	85W
Voltage - Rated:	133V
Package / Case:	NI-650H-4L
Supplier Device Package:	NI-650H-4L

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Introduction

The MRF085HR3 is a type of field-effect transistor (FET). This transistor has many applications in the field of radio-frequency (RF) systems. In this article, we will explore the various application fields and the underlying working principles of the MRF085HR3.

Application Fields

The MRF085HR3 is a high-performance RF FET. It is one of the most popular FETs available on the market due to its performance and reliability. This FET is primarily used in linear RF amplifier circuits, power amplifier circuits, and receiver and transmitter advancements.The MRF085HR3 is popularly used in antenna matching circuits and radio systems. This FET has a high voltage rating, making it suitable for use in high-power radio systems. Its high current rating also allows it to be used in RF switching circuits.The MRF085HR3 can also be used in electronic warfare systems due to its high-performance capabilities. It is reliable and can efficiently handle large amounts of power, which makes it an ideal choice for this application.Furthermore, the MRF085HR3 can also be used in low-noise amplifier (LNA) circuits and other applications with extremely sensitive receiver components. It can be used to boost signal-to-noise ratio and reduce distortion, thus making it suitable for such applications.

Working Principle

The MRF085HR3 transistor is a field-effect transistor (FET). This means that it is a type of transistor that uses an electric field to make the current flow through it. The current flow is controlled by an electrostatic gate field that is placed between the source and drain of the transistor.In order to work properly, the MRF085HR3 requires an appropriate gate voltage to turn it ON and OFF. A large gate voltage will turn ON the transistor and a low gate voltage will turn it OFF. This makes the transistor incredibly efficient at switching current in high-frequency radio systems.The MRF085HR3 also has a high power rating and current capacity. This means that it can be used in high-power radio systems without fear of damaging the transistor itself. It also has a high breakdown voltage, giving it increased reliability.

Conclusion

The MRF085HR3 is a highly reliable and efficient field-effect transistor (FET) designed for use in radio-frequency (RF) systems. It has a high voltage rating, current capacity, and power rating, making it suitable for use in high-power radio systems. This FET is popularly used in antenna matching circuits, power amplifiers, and linear RF amplifiers. Furthermore, it can also be used in applications with extremely sensitive receiver components, such as low-noise amplifier (LNA) circuits. The MRF085HR3 works by using an electrostatic gate field that is placed between the source and drain of the transistor. This gate field is then turned ON and OFF using an appropriate gate voltage.

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