MRF4427

Series:	--
Packaging:	Bulk
Part Status:	Obsolete
Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	20V
Frequency - Transition:	--
Noise Figure (dB Typ @ f):	--
Gain:	20dB
Power - Max:	1.5W
DC Current Gain (hFE) (Min) @ Ic, Vce:	10 @ 10mA, 5V
Current - Collector (Ic) (Max):	400mA
Operating Temperature:	--
Mounting Type:	Surface Mount
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:	8-SO

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The MRF4427 is a high power, general purpose, bipolar NPN silicon transistor widely used for power amplification and switching applications. In this article, we will discuss the application field and working principle of the MRF4427.The MRF4427 is categorized under Transistors - Bipolar (BJT) - RF. It is typically used in radio frequency (RF) applications, such as amplifiers and power controllers. It has an operating frequency range of 100 MHz to 1 GHz with a maximum collector current of 11 A. It is suitable for use in base station, antenna, radar and CATV applications.The MRF4427 has a maximum collector-emitter voltage (Vce(max)) of 55V and a maximum collector-base voltage (Vcb(max)) of 80V. It has a maximum power dissipation of 12 watts and a minimum hFE of 16. It can handle collector currents up to 10A and has a maximum gain bandwidth product (fT) of 4.5GHz. It also has a maximum junctions temperature (Tj(max)) of 150C.The MRF4427 is made up of two NPN transistors in a single package. It consists of ahigh-level PNP common-base and an NPN common-emitter connected in an amplification configuration. This allows the transistor to have a greater gain, higher impedance and higher frequencies than the single transistor types.The MRF4427 operates in the Class AB region, meaning that the collector current varies linearly with the base-to-collector voltage. The transistor works by controlling the currents entering and leaving the emitter. In other words, it acts as a general purpose amplifier and switch.The biasing of the transistor is essential to its operation. The base-to-collector voltage must be held at a fixed bias voltage to prevent the collector current from becoming too large or too small. This is accomplished by biasing the gate to the desired voltage, typically 0.7V.The MRF4427 also uses a technique called pulse width modulation to control the collector current. This is done by changing the duty cycle of the input signal, which causes the current to rapidly alternate between 0A and the maximum. This allows the transistor to switch between different output levels with a high degree of accuracy.The MRF4427 can also be used in switching applications. It can be used to switch between collector and emitter voltages or between different powers. The transistor can also be used to switch between different resistances.In conclusion, the MRF4427 is a useful and versatile bipolar NPN transistor that is primarily used in RF applications such as amplifiers and power controllers. It has a range of features such as high speed, high gain, high impedance, and pulse width modulation. The biasing of the transistor is essential for its operation and for controlling its collector current. The MRF4427 does not require a heatsink and can handle collector currents up to 10A.

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