Allicdata Part #: | 1465-1191-ND |
Manufacturer Part#: |
MRF455 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | M/A-Com Technology Solutions |
Short Description: | TRANS RF NPN 18V 15A 211-07 |
More Detail: | RF Transistor NPN 18V 15A 60W Chassis Mount 211-0... |
DataSheet: | MRF455 Datasheet/PDF |
Quantity: | 27 |
Series: | -- |
Packaging: | Tray |
Part Status: | Active |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 18V |
Frequency - Transition: | -- |
Noise Figure (dB Typ @ f): | -- |
Gain: | 13dB |
Power - Max: | 60W |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 10 @ 5A, 5V |
Current - Collector (Ic) (Max): | 15A |
Operating Temperature: | -- |
Mounting Type: | Chassis Mount |
Package / Case: | 211-07 |
Supplier Device Package: | 211-07, STYLE 1 |
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The transistor was invented back in 1947 and has been one of the most widely used electronic components ever since. Over the years, advances in transistor technology have led to the development of transistors specifically designed to operate in the radio frequency (RF) range, such as the MRF455. This article will examine the application field and working principle of the MRF455.
The MRF455 is a type of bipolar junction transistor (BJT) designed to operate in the RF range. It is a silicon NPN type device with a frequency range of up to 250MHz. The MRF455 is typically used in power amplifier applications and can provide up to 80 watts of power.
The application field of the MRF455 is quite diverse. It is used in a variety of applications such as radio transmitters and receivers, satellite communication systems, military communication systems, microwave ovens, and more. Its power capabilities make it ideal for driving powerful high-frequency signals required for these applications.
The working principle of the MRF455 is based on the bipolar transistor structure. The BJT consists of three layers, the base, the collector, and the emitter. The collector and the emitter are joined together and form the input and output terminals of the transistor. The base terminal is the control element that controls the current flow between the collector and the emitter.
When a voltage is applied to the base terminal, it causes a current to flow from the collector to the emitter. This current flow is modulated by the voltage applied to the base terminal, which allows the current flow to be controlled. This is the basic working principle of the MRF455.
The MRF455 also employs a variety of other techniques to further improve performance. One technique is the use of base-emitter junctions. The base-emitter junctions are designed to reduce the amount of power loss due to heat. This helps to increase the power efficiency of the MRF455 while maintaining low levels of distortion and noise.
In addition, the MRF455 also uses negative feedback to reduce distortion and noise. Negative feedback is when part of the output signal is fed back into the input. This reduces the amount of distortion and noise created by the amplifier as the input signal is applied.
The MRF455 is a versatile and powerful transistor that is used in a wide range of applications. It is ideally suited for driving powerful high-frequency signals and providing excellent power efficiency. Its working principle is based on the bipolar junction transistor and it also employs a variety of techniques to improve performance. Understanding its application field and working principle is essential for those working with the MRF455.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
MRF455 | M/A-Com Tech... | -- | 27 | TRANS RF NPN 18V 15A 211-... |
MRF454 | M/A-Com Tech... | -- | 40 | TRANS RF NPN 25V 20A 211-... |
MRF422 | M/A-Com Tech... | 56.9 $ | 34 | TRANS RF NPN 35V 20A 211-... |
MRF448 | M/A-Com Tech... | 118.2 $ | 24 | TRANS RF NPN 50V 16A 211-... |
MRF428 | M/A-Com Tech... | 65.03 $ | 40 | TRANS RF NPN 55V 20A 211-... |
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