MRF4427GR2

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The MRF4427GR2 is a high-performance RF transistor that is ideal for many RF applications. This device is capable of operating in a wide frequency range of 0.5 to 2.5 GHz. It has extremely low noise and distortion levels, which make it ideal for use in high-definition TV systems. It is also capable of providing increased robustness and higher power output. The device is capable of providing up to 25 watts of power at 1.5GHz and 31 watts at 2.5GHz.

The MRF4427GR2 is a NPN silicon RF bipolar transistor with a 50Ω/25V/6.4A drain-to-source voltage that provides high linearity in both the frequency and power domains. It is a feature-rich transistor proven for operating in high temperature conditions and for delivering output power levels of 3.2W at 500-2000MHz, 17.7W at 1.5GHz and 31W at 2.5GHz.

This low compression transistor is designed for use in ultra-linear amplifier applications. It operates in saturation mode and is designed to be coupled with matching components as part of a complete amplifier. The MRF4427GR2 is capable of providing an excellent level of linearity, which is essential for high-frequency linear applications, such as wireless and digital TV. This excellent performance paired with the transistor’s wideband capability makes it an ideal choice for many RF applications.

The MRF4427GR2 is based on a design which is optimized for outstanding intermod and gain flatness performance. This allows for an efficient amplifier solution as well as excellent linearity and low distortion products for operation across the entire frequency of a given application. The device features an ON-OFF control that enables an amplifier to be turned on and off without altering the system’s characteristics.

The MRF4427GR2 is also a relatively low-power, low-noise design, which makes it a great choice for low noise amplifier applications. In addition, the device is also optimized for broadband bandwidths, fast switching speeds, low output capacitance, and lower input capacitance, resulting in improved efficiency and improved system performance.

The MRF4427GR2 is manufactured using a BiMOS process, which provides a combination of low noise, high gain, and low distortion. This process ensures that the device is capable of providing wide signal bandwidth and minimum signal distortion. The device also features a high voltage rating of 250V, which enables it to be used in high power applications.

The MRF4427GR2 is an excellent choice for RF applications that require excellent linearity, low noise operation, and robust power handling. It is an especially suitable device for high-output power amplifiers. With the combination of its excellent linearity and exceptional power, the MRF4427GR2 is the ideal replacement for existing amplifier designs.

The specific data is subject to PDF, and the above content is for reference