Allicdata Part #: | MRF4427R1-ND |
Manufacturer Part#: |
MRF4427R1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | TRANS NPN 20V 400MA SO8 |
More Detail: | RF Transistor NPN 20V 400mA 1.5W Surface Mount 8-... |
DataSheet: | MRF4427R1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 20V |
Frequency - Transition: | -- |
Noise Figure (dB Typ @ f): | -- |
Gain: | 20dB |
Power - Max: | 1.5W |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 10 @ 10mA, 5V |
Current - Collector (Ic) (Max): | 400mA |
Operating Temperature: | -- |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-dBGA (2x1.5) |
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MRF4427R1 is a type of surface-mount, broadband, medium-power, NPN, RF transistor. It is designed to be used in wideband amplifiers in the frequency range of 400 to 1000 MHz and is ideal for use in applications such as communications systems and high-frequency microwaves. This type of transistor is generally used in high power, broad bandwidth transmitters and receivers, point-to-point radio links, base stations, and terminals.
Principle of Operation
MRF4427R1 is an NPN (positive-negative-positive) bipolar junction transistor (BJT) which operates in Class A, B, AB, and C linear and nonlinear applications. It can be operated as either a grounded-base amplifier, or a common-base amplifier. In its common-base circuit configuration, the transistor is used to amplify signals between the base and the collector, while in its grounded-base configuration, the transistor is used to amplify signals between the base and the emitter.
The transistor utilizes a silicon epitaxial planar base, which is surrounded by two diffusions (emitter and collector) and its collector current is determined by the base current. It is built using a process known as "bipolar-enhancement" which helps maintain high frequency performance while reducing signal distortion. The transistor has a low noise figure, making it ideal for use in low-noise, high-power amplifier circuits.
Applications
MRF4427R1 is designed to be used in wideband amplifiers in the frequency range of 400 to 1000 MHz and is ideal for use in applications such as communications systems, high-frequency microwaves, base stations and terminals. It is suitable for use in both high-power and low-power applications, such as mobile and portable transceivers, high power transmitters, transponders, and point-to-point radio links.
MRF4427R1 can also be used as an oscillator in voltage-controlled oscillator (VCO) circuits, allowing a wide range of applications in both analog and digital communications and control systems. The transistor can also be used as an amplifier and modulator in a wide range of radio frequency circuits, such as amplifiers, mixers, and upconverters, as well as for near-field communication systems.
Conclusion
MRF4427R1 is a surface-mount, broadband, medium-power, NPN RF transistor, designed to be used in wideband amplifiers in the frequency range of 400-1000 MHz. It is suitable for use in high-power and low-power applications and can be used in various linear and nonlinear applications, such as communications systems, high-frequency microwaves, base stations, and terminals. The transistor has a low noise figure, making it an ideal choice for low-noise, high-power applications.
The specific data is subject to PDF, and the above content is for reference
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